| ID | 34143 |
| FullText URL | |
| Author |
Nagano, Takayuki
Sugiyama, Hiroyuki
Kuwahara, Eiji
Watanabe, Rie
Kusai, Haruka
Kashino, Yoko
|
| Abstract | A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films. |
| Keywords | fullerene devices
field effect transistors
carrier density
carrier mobility
hopping conduction
|
| Note | Digital Object Identifier:10.1063/1.1994957
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 11 July 2005, 87, 023501, (3 Pages). Publisher URL:http://dx.doi.org/10.1063/1.1994957 Copyright © 2006 American Institute of Physics. All rights reserved. |
| Published Date | 2005-7
|
| Publication Title |
Applied Physics Letters
|
| Volume | volume87
|
| Issue | issue2
|
| Start Page | 023501
|
| End Page | 023501
|
| Content Type |
Journal Article
|
| language |
English
|
| Refereed |
True
|
| DOI | |
| Submission Path | physics_general/4
|
