ID | 34143 |
FullText URL | |
Author |
Nagano, Takayuki
Sugiyama, Hiroyuki
Kuwahara, Eiji
Watanabe, Rie
Kusai, Haruka
Kashino, Yoko
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Abstract | A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films. |
Keywords | fullerene devices
field effect transistors
carrier density
carrier mobility
hopping conduction
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Note | Digital Object Identifier:10.1063/1.1994957
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 11 July 2005, 87, 023501, (3 Pages). Publisher URL:http://dx.doi.org/10.1063/1.1994957 Copyright © 2006 American Institute of Physics. All rights reserved. |
Published Date | 2005-7
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Publication Title |
Applied Physics Letters
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Volume | volume87
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Issue | issue2
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Start Page | 023501
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End Page | 023501
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Content Type |
Journal Article
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language |
English
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Refereed |
True
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DOI | |
Submission Path | physics_general/4
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