| ID | 34143 |
| フルテキストURL | |
| 著者 |
Nagano, Takayuki
Okayama University
Sugiyama, Hiroyuki
Okayama University
Kuwahara, Eiji
Okayama University
Watanabe, Rie
Okayama University
Kusai, Haruka
Okayama University
Kashino, Yoko
Okayama University
|
| 抄録 | A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films. |
| キーワード | fullerene devices
field effect transistors
carrier density
carrier mobility
hopping conduction
|
| 備考 | Digital Object Identifier:10.1063/1.1994957
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 11 July 2005, 87, 023501, (3 Pages). Publisher URL:http://dx.doi.org/10.1063/1.1994957 Copyright © 2006 American Institute of Physics. All rights reserved. |
| 発行日 | 2005-7
|
| 出版物タイトル |
Applied Physics Letters
|
| 巻 | 87巻
|
| 号 | 2号
|
| 開始ページ | 023501
|
| 終了ページ | 023501
|
| 資料タイプ |
学術雑誌論文
|
| 言語 |
英語
|
| 査読 |
有り
|
| DOI | |
| Submission Path | physics_general/4
|
