ID | 15486 |
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Sort Key | 3
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FullText URL | |
Author |
Miura, Yoshinari
Kawamura, Toshio
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Abstract | Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph (SEM). XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and inlet position of oxygen gas effect the c-axis orientation, the growth rate and the microstructure of the films. Optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows: the substrate temperature;400℃, the evaporation rate;5.0(A)/s, the oxygen pressure;2.0x10(-4) Torr, the r.f. power;150 to 200W, and the oxygen gas inlet near the substrate. For the film prepared under the optimum conditions, the standard deviation σ of the rocking curve for the (002) diffraction was 1.9deg, smaller than that of the film prepared by using an r.f. sputtering method.
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Publication Title |
Memoirs of the Faculty of Engineering, Okayama University
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Published Date | 1990-12-14
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Volume | volume25
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Issue | issue1
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Publisher | Faculty of Engineering, Okayama University
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Publisher Alternative | 岡山大学工学部
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Start Page | 23
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End Page | 35
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ISSN | 0475-0071
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NCID | AA10699856
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Content Type |
Departmental Bulletin Paper
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OAI-PMH Set |
岡山大学
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language |
English
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File Version | publisher
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NAID | |
Eprints Journal Name | mfe
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