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ID 15469
Eprint ID
15469
FullText URL
Author
Kamiyabu, Hideto
Sakakibara, Akira
Maeda, Hironobu
Hida, Moritaka
Abstract
Surface tension (γ(L)) and contact angle (θ) of gallium related to wettability on Teflon and other substrates (Al(2)O(3), SiO(2), glass, graphite, BN, AI, Ni, As etc.) were investigated. The values of Teflon were 0.70(6)N/m and 158° in pure argon atmosphere, and the ones of other substrates were listed in a table in this text. We were interested especially in the relative values, γ(L)'s, on the substrates as compared with γ(L) on Teflon substrate. Liquid Ga showed spreading wetting on pure Ni metal and adhesional wetting on Al (supposed to be covered by A1(2)O(3)) and on metallic polycrystal As. Surface tension of Ga was remarkably decreased by a kind of oxide contamination due to oxygen in air. The surface layer coated by the contamination was of amorphous state nearly same as liquid Ga. The amorphous coat caused liquid Ga rather high supercooling of △T~35K. It seems that the contamination layer (oxide fi1m) smeared the crystal nucleation sites on the free surface of liquid Ga
Published Date
1989-03-30
Publication Title
Memoirs of the Faculty of Engineering, Okayama University
Publication Title Alternative
岡山大学工学部紀要
Volume
volume23
Issue
issue2
Publisher
Faculty of Engineering, Okayama University
Publisher Alternative
岡山大学工学部
Start Page
1
End Page
8
ISSN
0475-0071
NCID
AA10699856
Content Type
Departmental Bulletin Paper
language
英語
File Version
publisher
Refereed
False
Eprints Journal Name
mfe