| FullText URL | fulltext20230322-2.pdf |
|---|---|
| Author | Takahashi, Masakuni| Sakuma, Ryo| Hashimoto, Hideki| Fujii, Tatsuo| Takada, Jun| |
| Note | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of Physical Chemistry C, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.2c08380| This full-text file will be available in Jan. 2024.| |
| Published Date | 2023-01-24 |
| Publication Title | The Journal of Physical Chemistry C |
| Volume | volume127 |
| Issue | issue5 |
| Publisher | American Chemical Society (ACS) |
| Start Page | 2223 |
| End Page | 2230 |
| ISSN | 1932-7447 |
| NCID | AA1217589X |
| Content Type | Journal Article |
| language | English |
| OAI-PMH Set | 岡山大学 |
| Copyright Holders | © 2023 American Chemical Society |
| File Version | author |
| DOI | 10.1021/acs.jpcc.2c08380 |
| Web of Science KeyUT | 000930697400001 |
| Related Url | isVersionOf https://doi.org/10.1021/acs.jpcc.2c08380 |
| FullText URL | fulltext.pdf |
|---|---|
| Author | Tamura, Katsunori| Oshima, Yuri| Fuse, Yuta| Nagaoka, Noriyuki| Kunoh, Tatsuki| Nakanishi, Makoto| Fujii, Tatsuo| Nanba, Tokuro| Takada, Jun| |
| Published Date | 2022-04-10 |
| Publication Title | ACS Omega |
| Volume | volume7 |
| Issue | issue15 |
| Publisher | American Chemical Society |
| Start Page | 12795 |
| End Page | 12802 |
| ISSN | 2470-1343 |
| Content Type | Journal Article |
| language | English |
| OAI-PMH Set | 岡山大学 |
| Copyright Holders | © 2022 The Authors. |
| File Version | publisher |
| PubMed ID | 35474768 |
| DOI | 10.1021/acsomega.1c07390 |
| Web of Science KeyUT | 000812569200001 |
| Related Url | isVersionOf https://doi.org/10.1021/acsomega.1c07390 |
| FullText URL | fulltext.pdf |
|---|---|
| Author | Tamura, Katsunori| Kunoh, Tatsuki| Nakanishi, Makoto| Kusano, Yoshihiro| Takada, Jun| |
| Published Date | 2020-10-16 |
| Publication Title | ACS Omega |
| Volume | volume5 |
| Issue | issue42 |
| Publisher | American Chemical Society |
| Start Page | 27287 |
| End Page | 27294 |
| ISSN | 2470-1343 |
| Content Type | Journal Article |
| language | English |
| OAI-PMH Set | 岡山大学 |
| Copyright Holders | © 2020 American Chemical Society |
| File Version | publisher |
| PubMed ID | 33134691 |
| DOI | 10.1021/acsomega.0c03574 |
| Web of Science KeyUT | 000586784200036 |
| Related Url | isVersionOf https://doi.org/10.1021/acsomega.0c03574 |
| Author | Manchur, Mohammed Abul| Kikumoto, Mei| Kanao, Tadayoshi| Takada, Jun| Kamimura, Kazuo| |
|---|---|
| Published Date | 2011-05 |
| Publication Title | Extemophiles |
| Volume | volume15 |
| Issue | issue3 |
| Content Type | Journal Article |
| JaLCDOI | 10.18926/15486 |
|---|---|
| FullText URL | Mem_Fac_Eng_OU_25_1_23.pdf |
| Author | Miura, Yoshinari| Takada, Jun| Osaka, Akiyoshi| Kawamura, Toshio| |
| Abstract | Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph (SEM). XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and inlet position of oxygen gas effect the c-axis orientation, the growth rate and the microstructure of the films. Optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows: the substrate temperature;400℃, the evaporation rate;5.0(A)/s, the oxygen pressure;2.0x10(-4) Torr, the r.f. power;150 to 200W, and the oxygen gas inlet near the substrate. For the film prepared under the optimum conditions, the standard deviation σ of the rocking curve for the (002) diffraction was 1.9deg, smaller than that of the film prepared by using an r.f. sputtering method. |
| Publication Title | Memoirs of the Faculty of Engineering, Okayama University |
| Published Date | 1990-12-14 |
| Volume | volume25 |
| Issue | issue1 |
| Start Page | 23 |
| End Page | 35 |
| ISSN | 0475-0071 |
| language | English |
| File Version | publisher |
| NAID | 120002307600 |
| JaLCDOI | 10.18926/15474 |
|---|---|
| FullText URL | Mem_Fac_Eng_OU_24_1_53.pdf |
| Author | Osaka, Akiyoshi| Takao Seiji| Oda, Kiichi| Takada, Jun| Miura, Yoshinari| |
| Abstract | Electrical resistance and X-ray photoelectron depth profile analysis are studied for antimony doped tin oxide films developed on silica, alkali-free and sodalime slide glass substrates. The sodium ions diffused from the substrates to the films prevented the crystal growth of rutile type tin oxide in the film, resulting in the high electrical resistance. A diffusion layer has been detected for each film with diffuse profiles of multi valent cations (Sn, Si or Ca) at the interface of the tin oxide film and substrate. A greater amount of sodium atoms have been detected in the film developed on the soda-lime glass while almost no sodium atoms have been found in those on the other substrates. This can be explained by the diffusion of the sodium ions in the substrate due to a drastic hydronium-sodium exchange mechanism under highly acidic conditions during the dipping and drying processes. |
| Publication Title | Memoirs of the Faculty of Engineering, Okayama University |
| Published Date | 1989-11-29 |
| Volume | volume24 |
| Issue | issue1 |
| Start Page | 53 |
| End Page | 61 |
| ISSN | 0475-0071 |
| language | English |
| File Version | publisher |
| NAID | 120002307279 |
| JaLCDOI | 10.18926/15473 |
|---|---|
| FullText URL | Mem_Fac_Eng_OU_26_2_61.pdf |
| Author | Osaka, Akiyoshi| Kawabata Kouji| Nanba, Tokuro| Takada, Jun| Miura, Yoshinari| |
| Abstract | Mullite-dispersed silica ceramics were prepared through sol-gel processing by the use of tetraethoxy silane, aluminium nitrate and aluminium isopropoxide as the Si and Al sources where HCl and HN0(3) were the catalyst. Effect of the starting materials, solvents and catalysts was examined on the gelation time or temperature of mullite precipitation. Apparent activation energy of gelation ranged from 80 to 95kJ/mol. The presence of AI in the sols elongated the gelling time suggesting the formation of chelate bonds between AI and Si-OR or Si-OH bonds. |
| Publication Title | Memoirs of the Faculty of Engineering, Okayama University |
| Published Date | 1992-03-28 |
| Volume | volume26 |
| Issue | issue2 |
| Start Page | 61 |
| End Page | 67 |
| ISSN | 0475-0071 |
| language | English |
| File Version | publisher |
| NAID | 120002307416 |
| JaLCDOI | 10.18926/15436 |
|---|---|
| FullText URL | Mem_Fac_Eng_OU_26_2_69.pdf |
| Author | Fujii, Tatsuo| Sakata Naoki| Nanba, Tokuro| Osaka, Akiyoshi| Miura, Yoshinari| Takada, Jun| |
| Abstract | (001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions. |
| Publication Title | Memoirs of the Faculty of Engineering, Okayama University |
| Published Date | 1992-03-28 |
| Volume | volume26 |
| Issue | issue2 |
| Start Page | 69 |
| End Page | 75 |
| ISSN | 0475-0071 |
| language | English |
| File Version | publisher |
| NAID | 120002307639 |
| JaLCDOI | 10.18926/14088 |
|---|---|
| FullText URL | Mem_Fac_Eng_OU_41_1_93.pdf |
| Author | Tarequl Islam Bhuiyan| Nakanishi, Makoto| Fujii, Tatsuo| Takada, Jun| |
| Abstract | Co-precipitation method has been employed to fabricate neodymium substituted hematite with different compositions from the aqueous solution of their corresponding metal salts. Thermal analysis and X-ray diffraction studies revealed the coexistence of Fe(2)O(3) and Nd(2)O(3) phases up to 1050℃ and formation of solid solution phase among them at 1100℃ and above temperatures, which was evidenced by shifting of the XRD peaks. Unit cell parameters and the cell volumes of the samples were found to increase by adding Nd(3+) ions in the reaction process. FESEM studies showed the suppression of particle growth due to the presence of Nd(3+) ions. Spectroscopic measurement evidenced that neodymium substituted hematite exhibited brighter yellowish red color tone than that of pure α-Fe(2)O(3). |
| Publication Title | Memoirs of the Faculty of Engineering, Okayama University |
| Published Date | 2007-01 |
| Volume | volume41 |
| Issue | issue1 |
| Start Page | 93 |
| End Page | 98 |
| ISSN | 0475-0071 |
| language | English |
| File Version | publisher |
| NAID | 120002308163 |
| JaLCDOI | 10.18926/fest/11614 |
|---|---|
| Title Alternative | Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method |
| FullText URL | 002_121_129.pdf |
| Author | Fujiwara, Takashi| Fujii, Tatsuo| Nanba, Tokuro| Takada, Jun| Miura, Yoshinari| |
| Abstract | Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2～6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature. |
| Keywords | ZnO film Al doped ZnO transparent conductive film r.f. activated reactive evaporation method |
| Publication Title | 岡山大学環境理工学部研究報告 |
| Published Date | 1997-01-10 |
| Volume | volume2 |
| Issue | issue1 |
| Start Page | 121 |
| End Page | 129 |
| ISSN | 1341-9099 |
| language | Japanese |
| File Version | publisher |
| NAID | 120002313550 |
