Fabrication of C₆₀ field-effect transistors with polyimide and Ba_0.4Sr_0.6Ti_0.96O₃ gate insulators

Flexible C₆₀ field-effect transistor (FET) device has been fabricated with polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally-off FET properties are observed in this FET device. The field-effect mobility, ?, is estimated to be ~10^-2 cm² V^-1 s^-1 at 300 K. Furthermore, the C₆₀ FET has been fabricated with high dielectric Ba_0.4Sr_0.6Ti_0.96O₃ (BST) gate insulator, showing n-channel properties; the ? value is estimated to be ~10^-4 cm² V^-1 s^-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C₆₀ FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.