| ID | 34141 |
| フルテキストURL | |
| 著者 |
Nagano, Takayuki
Okayama University
Haruyama, Yusuke
Okayama University
Kuwahara, Eiji
Okayama University
Ochi, Kenji
Okayama University
Fujiwara, Akihiko
Japan Advanced Institute of Science and Technology
|
| 抄録 | Flexible C60 field-effect transistor (FET) device has been fabricated with polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally-off FET properties are observed in this FET device. The field-effect mobility, ?, is estimated to be ~10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with high dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the ? value is estimated to be ~10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively. |
| キーワード | fullerene devices
insulated gate field effect transistors
polymers
barium compounds
strontium compounds
dielectric materials
|
| 備考 | Digital Object Identifier:10.1063/1.2081134
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letter, 3 October 2005, 87, 143506, (3 Pages). Publisher URL:http://dx.doi.org/10.1063/1.2081134 Copyright © 2005 American Institute of Physics. All rights reserved. |
| 発行日 | 2005-10
|
| 出版物タイトル |
Applied Physics Letters
|
| 巻 | 87巻
|
| 号 | 14号
|
| 資料タイプ |
学術雑誌論文
|
| 言語 |
英語
|
| 査読 |
有り
|
| DOI | |
| Submission Path | physics_general/3
|
