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Author
Yamakata, Akira Graduate School of Natural Science and Technology, Okayama University
Kato, Kosaku Graduate School of Natural Science and Technology, Okayama University
Urakami, Takumi Department of Molecular Engineering, Graduate School of Engineering, Kyoto University
Tsujimura, Sota Department of Chemistry, Graduate School of Science, Kobe University
Murayama, Kasumi Department of Chemistry, Graduate School of Science, Kobe University
Higashi, Masahiro Department of Complex Systems Science, Graduate School of Informatics, Nagoya University
Sato, Hirofumi Department of Molecular Engineering, Graduate School of Engineering, Kyoto University
Kobori, Yasuhiro Department of Chemistry, Graduate School of Science, Kobe University
Umeyama, Tomokazu Department of Applied Chemistry, Graduate School of Engineering, University of Hyogo
Imahori, Hiroshi Department of Molecular Engineering, Graduate School of Engineering, Kyoto University
Abstract
The power conversion efficiency (PCE) of organic photovoltaics (OPVs) has reached more than 19% due to the rapid development of non-fullerene acceptors (NFAs). To compete with the PCEs (26%) of commercialized silicon-based inorganic photovoltaics, the drawback of OPVs should be minimized. This drawback is the intrinsic large loss of open-circuit voltage; however, a general approach to this issue remains elusive. Here, we report a discovery regarding highly efficient NFAs, specifically ITIC. We found that charge-transfer (CT) and charge dissociation (CD) can occur even in a neat ITIC film without the donor layer. This is surprising, as these processes were previously believed to take place exclusively at donor/acceptor heterojunctions. Femtosecond time-resolved visible to mid-infrared measurements revealed that in the neat ITIC layers, the intermolecular CT immediately proceeds after photoirradiation (<0.1 ps) to form weakly-bound excitons with a binding energy of 0.3 eV, which are further dissociated into free electrons and holes with a time-constant of 56 ps. Theoretical calculations indicate that stacking faults in ITIC (i.e., V-type molecular stacking) induce instantaneous intermolecular CT and CD in the neat ITIC layer. In contrast, J-type stacking does not support such CT and CD. This previously unknown pathway is triggered by the larger dipole moment change on the excited state generated at the lower symmetric V-type molecular stacking of ITIC. This is in sharp contrast with the need of sufficient energy offset for CT and CD at the donor-acceptor heterojunction, leading to the significant voltage loss in conventional OPVs. These results demonstrate that the rational molecular design of NFAs can increase the local dipole moment change on the excited state within the NFA layer. This finding paves the way for a groundbreaking route toward the commercialization of OPVs.
Published Date
2024-07-10
Publication Title
Chemical Science
Volume
volume15
Issue
issue32
Publisher
Royal Society of Chemistry
Start Page
12686
End Page
12694
ISSN
2041-6520
Content Type
Journal Article
language
English
OAI-PMH Set
岡山大学
Copyright Holders
© 2024 The Author(s).
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publisher
DOI
Web of Science KeyUT
Related Url
isVersionOf https://doi.org/10.1039/d4sc00917g
License
https://creativecommons.org/licenses/by/3.0/
Funder Name
Ministry of Education, Culture, Sports, Science and Technology
Japan Science and Technology Agency
Yakumo Foundation for Environmental Science
Izumi Science and Technology Foundation
Nippon Sheet Glass Foundation for Materials Science and Engineering
助成番号
20H05831
20H05832
20H05838
20H05839
22H00344
24H00485
24K21809
JPMJCR23I6