ID | 60785 |
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Author |
Guo, Yuxin
Division of Earth, Life, and Molecular Sciences, Graduate School of Natural Science and Technology, Okayama University
Yoshioka, Kaito
Division of Earth, Life, and Molecular Sciences, Graduate School of Natural Science and Technology, Okayama University
Hamao, Shino
Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro
Research Institute for Interdisciplinary Science, Okayama University
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Tani, Fumito
Institute for Materials Chemistry and Engineering, Kyushu University
Goto, Kenta
Institute for Materials Chemistry and Engineering, Kyushu University
Okamoto, Hideki
Division of Earth, Life, and Molecular Sciences, Graduate School of Natural Science and Technology, Okayama University
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Abstract | Picene derivatives incorporating imide moieties along the long-axis direction of the picene core (Cn-PicDIs) were conveniently synthesized through a four-step synthesis. Photochemical cyclization of dinaphthylethenes was used as the key step for constructing the picene skeleton. Field-effect transistor (FET) devices of Cn-PicDIs were fabricated by using ZrO2 as a gate substrate and their FET characteristics were investigated. The FET devices showed normally-off n-channel operation; the averaged electron mobility (μ) was evaluated to be 2(1) × 10−4, 1.0(6) × 10−1 and 1.4(3) × 10−2 cm2 V−1 s−1 for C4-PicDI, C8-PicDI and C12-PicDI, respectively. The maximum μ value as high as 2.0 × 10−1 cm2 V−1 s−1 was observed for C8-PicDI. The electronic spectra of Cn-PicDIs in solution showed the same profiles irrespective of the alkyl chain lengths. In contrast, in thin films, the UV absorption and photoelectron yield spectroscopy (PYS) indicated that the lowest unoccupied molecular orbital (LUMO) level of Cn-PicDIs gradually lowered upon the elongation of the alkyl chains, suggesting that the alkyl chains modify intermolecular interactions between the Cn-PicDI molecules in thin films. The present results provide a new strategy for constructing a high performance n-channel organic semiconductor material by utilizing the electronic features of phenacenes.
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Published Date | 2020-08-26
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Publication Title |
RSC Advances
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Volume | volume10
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Issue | issue52
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Publisher | Royal Society of Chemistry
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Start Page | 31547
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End Page | 31552
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ISSN | 2046-2069
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Content Type |
Journal Article
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language |
English
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OAI-PMH Set |
岡山大学
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Copyright Holders | © The Royal Society of Chemistry
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File Version | publisher
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DOI | |
Web of Science KeyUT | |
Related Url | isVersionOf https://doi.org/10.1039/D0RA06629J
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License | https://creativecommons.org/licenses/by-nc/3.0/
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Funder Name |
Ministry of Education, Culture, Sports, Science and Technology
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助成番号 | 26105004
17K05976
17K05500
18K04940
18K18736
19H02676
20K05648
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