| ID | 66179 |
| Author |
Li, YaJun
Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University
Sun, ZeXu
Nara Institute of Science and Technology (NAIST)
Kataoka, Noriyuki
Graduate School of Natural Science and Technology, Okayama University
ORCID
Setoguchi, Taro
Graduate School of Natural Science and Technology, Okayama University
Hashimoto, Yusuke
Nara Institute of Science and Technology (NAIST)
Takeuchi, Soichiro
Nara Institute of Science and Technology (NAIST)
Koga, Shunjo
Nara Institute of Science and Technology (NAIST)
Hoshi, Kazuhisa
Department of Physics, Tokyo Metropolitan University
Mizuguchi, Yoshikazu
Department of Physics, Tokyo Metropolitan University
Matsushita, Tomohiro
Nara Institute of Science and Technology (NAIST)
Wakita, Takanori
Graduate School of Natural Science and Technology, Okayama University
Kaken ID
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Muraoka, Yuji
Graduate School of Natural Science and Technology, Okayama University
Kaken ID
researchmap
Yokoya, Takayoshi
Graduate School of Natural Science and Technology, Okayama University
ORCID
Kaken ID
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| Abstract | La(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi–S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder.
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| Keywords | photoelectron holography
La(O,F)BiS2-x Se x
local structure
dopant site
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| Note | This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad079b.
This fulltext file will be available in Nov. 2024.
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| Published Date | 2023-11-21
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| Publication Title |
Japanese Journal of Applied Physics
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| Volume | volume62
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| Issue | issue12
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| Publisher | IOP Publishing
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| Start Page | 125001
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| ISSN | 0021-4922
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| NCID | AA12295836
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| Content Type |
Journal Article
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| language |
English
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| OAI-PMH Set |
岡山大学
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| Copyright Holders | © 2023 The Japan Society of Applied Physics
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| File Version | author
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| DOI | |
| Web of Science KeyUT | |
| Related Url | isVersionOf https://doi.org/10.35848/1347-4065/ad079b
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| Funder Name |
Japan Society for the Promotion of Science
Program for Promoting the Enhancement of Research Universities
Youth Doctor Support Project of the Gansu Provincial Department of Education
2023 Key Talent Project of Gansu Province
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| 助成番号 | JP18KK0076
JP20K20522
JP20H05882
2023QB-007
2023QB-007
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