ID | 65498 |
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Author |
Uchiyama, Takaki
Research Institute for Interdisciplinary Science, Okayama University
Goto, Hidenori
Research Institute for Interdisciplinary Science, Okayama University
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Uesugi, Eri
Research Institute for Interdisciplinary Science, Okayama University
Takai, Akihisa
Research Institute for Interdisciplinary Science, Okayama University
Zhi, Lei
Research Institute for Interdisciplinary Science, Okayama University
Miura, Akari
Research Institute for Interdisciplinary Science, Okayama University
Hamao, Shino
Research Institute for Interdisciplinary Science, Okayama University
Eguchi, Ritsuko
Research Institute for Interdisciplinary Science, Okayama University
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Ota, Hiromi
Advanced Science Research Center, Okayama University
Sugimoto, Kunihisa
Faculty of Science and Engineering, Kindai University
Fujiwara, Akihiko
Department of Nanotechnology for Sustainable Energy, Kwansei Gakuin University
Matsui, Fumihiko
Institute for Molecular Science, UVSOR Synchrotron Facility
Kimura, Koji
Department of Physical Science and Engineering, Nagoya Institute of Technology
Hayashi, Kouichi
Department of Physical Science and Engineering, Nagoya Institute of Technology
Ueno, Teppei
Research Institute for Interdisciplinary Science, Okayama University
Kobayashi, Kaya
Research Institute for Interdisciplinary Science, Okayama University
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Akimitsu, Jun
Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro
Research Institute for Interdisciplinary Science, Okayama University
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Abstract | Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor-metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi2Se3 were studied. Single-crystal X-ray diffraction (SC-XRD) showed no structural transitions but slight shrinkage of the lattice, indicating no structural origin of the transition. To better understand electronic properties of Ag-doped Bi2Se3, extended analyses of Hall effect and electric-field effect were carried out. Hall effect measurements revealed that the reduction of resistance was accompanied by increases in not only carrier density but carrier mobility. The field-effect mobility is different for positive and negative gate voltages, indicating that the E-F is located at around the bottom of the bulk conduction band (BCB) and that the carrier mobility in the bulk is larger than that at the bottom surface at all temperatures. The pinning of the E-F at the BCB is found to be a key issue to induce the S-M transition, because the transition can be caused by depinning of the E-F or the crossover between the bulk and the top surface transport.
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Note | The version of record of this article, first published in Scientific Reports, is available online at Publisher’s website: http://dx.doi.org/10.1038/s41598-023-27701-5
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Published Date | 2023-01-11
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Publication Title |
Scientific Reports
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Volume | volume13
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Issue | issue1
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Publisher | nature portfolio
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Start Page | 537
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ISSN | 2045-2322
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Content Type |
Journal Article
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language |
English
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OAI-PMH Set |
岡山大学
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Copyright Holders | © The Author(s) 2023
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File Version | publisher
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DOI | |
Web of Science KeyUT | |
Related Url | isVersionOf https://doi.org/10.1038/s41598-023-27701-5
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License | http://creativecommons.org/licenses/by/4.0/
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Citation | Uchiyama, T., Goto, H., Uesugi, E. et al. Semiconductor–metal transition in Bi2Se3 caused by impurity doping. Sci Rep 13, 537 (2023). https://doi.org/10.1038/s41598-023-27701-5
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Funder Name |
Ministry of Education, Culture, Sports, Science and Technology
Japan Society for the Promotion of Science
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助成番号 | 17K05500
18K04940
18K18736
19H02676
20H05878
20H05879
20H05881
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