ID | 55633 |
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Author |
Wakita, Takanori
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
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Terashima, Kensei
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Hamada, Takahiro
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Fujiwara, Hirokazu
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Minohara, Makoto
Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Kobayashi, Masaki
Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Horiba, Koji
Kumigashira, Hiroshi
Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Kutluk, Galif
Synchrotron Radiation Center, Hiroshima University
Nagao, Masanori
Center for Crystal Science and Technology, University of Yamanashi
Watauchi, Satoshi
Center for Crystal Science and Technology, University of Yamanashi
Tanaka, Isao
Center for Crystal Science and Technology, University of Yamanashi
Demura, Satoshi
National Institute for Materials Science
Okazaki, Hiroyuki
National Institute for Materials Science
Takano, Yoshihiko
National Institute for Materials Science
Mizuguchi, Yoshikazu
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University
Miura, Osuke
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University
Okada, Kozo
Department of Physics and the Graduate school of Natural Science and Technology, Okayama University
Muraoka, Yuji
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Yokoya, Takayoshi
Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
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Abstract | We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x = 0.7 has no f(0) component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (E-F) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2.
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Note | This is an article published by American Physical Society
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Published Date | 2017-02
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Publication Title |
Physical Review B
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Volume | volume95
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Issue | issue8
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Publisher | American Physical Society
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Start Page | 085109
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ISSN | 2469-9950
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NCID | AA11187113
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Content Type |
Journal Article
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language |
English
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OAI-PMH Set |
岡山大学
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Copyright Holders | American Physical Society
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File Version | publisher
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DOI | |
Web of Science KeyUT | |
Related Url | isVersionOf https://doi.org/10.1103/PhysRevB.95.085109
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