| ID | 63816 |
| FullText URL | |
| Author |
Rama, Venkata Krishna Rao
Graduate School of Natural Science and Technology, Okayama University
Ranade, Ajinkya K.
Department of Physical Science and Engineering, Nagoya Institute of Technology
Desai, Pradeep
Department of Physical Science and Engineering, Nagoya Institute of Technology
Todankar, Bhagyashri
Department of Physical Science and Engineering, Nagoya Institute of Technology
Kalita, Golap
Department of Physical Science and Engineering, Nagoya Institute of Technology
Suzuki, Hiroo
Graduate School of Natural Science and Technology
Tanemura, Masaki
Department of Physical Science and Engineering, Nagoya Institute of Technology
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| Abstract | We present the device properties of a nickel (Ni)- gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited hBN film on a Ga(2)O(3 )substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga2O3-based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga2O3-based Schottky junction devices.
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| Published Date | 2022-07-22
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| Publication Title |
ACS Omega
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| Publisher | American Chemical Society
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| Start Page | 26021
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| End Page | 26028
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| ISSN | 2470-1343
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| Content Type |
Journal Article
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| language |
English
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| OAI-PMH Set |
岡山大学
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| Copyright Holders | © 2022 The Authors.
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| File Version | publisher
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| DOI | |
| Web of Science KeyUT | |
| Related Url | isVersionOf https://doi.org/10.1021/acsomega.2c00506
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| License | https://creativecommons.org/licenses/by-nc-nd/4.0/
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