ID | 34159 |
FullText URL | |
Author |
Kuwahara, Eiji
Kusai, Haruka
Nagano, Takayuki
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Abstract | Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C60/pentacene heterostructure. A complementary metal-oxide-semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of 4, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices. |
Keywords | Band structure
Carbon
CMOS integrated circuits
Field effect transistors
Logic gates
Thin films
Threshold voltage
Band structures
Logic gate circuits
N-channel field-effective mobilities
Pentacene
Logic circuits
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Note | Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 26 September 2005, Volume 413, Issues 4-6, Pages 379-383.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.07.096 Copyright 2005 Elsevier B.V. All rights reserved. |
Published Date | 2005-09-26
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Publication Title |
Chemical Physics Letters
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Volume | volume413
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Issue | issue4-6
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Publisher | Elsevier Science B.V.
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Start Page | 379
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End Page | 383
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ISSN | 0009-2614
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NCID | AA00602122
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Content Type |
Journal Article
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language |
English
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Copyright Holders | Elsevier B.V.
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File Version | author
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Refereed |
True
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DOI | |
Web of Science KeyUT | |
Submission Path | physics_general/5
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