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ID 48743
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Author
Saeki, K
Yao, Y
Wakita, T
Hirai, M
Eguchi, R
Shin, S
Abstract
We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal–insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3–8 eV along the Г–Z direction. The periodicity of the dispersive band is found to be 2.2 Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.
Keywords
ARPES
VO<sub>2</sub>
Thin film
Published Date
2010-08
Publication Title
Journal of Electron Spectroscopy and Related Phenomena
Volume
volume181
Issue
issue2-3
Publisher
Elsevier
Start Page
249
End Page
251
ISSN
0368-2048
NCID
AA00697082
Content Type
Journal Article
Project
Research Center of New Functional Materials for Energy Production, Storage, and Transport
Official Url
http://www.sciencedirect.com/science/article/pii/S0368204810000149
language
英語
Copyright Holders
Copyright © 2010 Elsevier B.V. All rights reserved.
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author
Refereed
True
DOI
Web of Sience KeyUT