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ID 34159
フルテキストURL
著者
Kuwahara, Eiji Department of Chemistry, Okayama University
Kusai, Haruka Department of Chemistry, Okayama University
Nagano, Takayuki Department of Chemistry, Okayama University
Takayanagi, Toshio Department of Chemistry, Okayama University
Kubozono, Yoshihiro Department of Chemistry, Okayama University
抄録

Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C60/pentacene heterostructure. A complementary metal-oxide-semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of 4, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.

キーワード
Band structure
Carbon
CMOS integrated circuits
Field effect transistors
Logic gates
Thin films
Threshold voltage
Band structures
Logic gate circuits
N-channel field-effective mobilities
Pentacene
Logic circuits
備考
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 26 September 2005, Volume 413, Issues 4-6, Pages 379-383.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.07.096
Copyright 2005 Elsevier B.V. All rights reserved.
発行日
2005-09-26
出版物タイトル
Chemical Physics Letters
413巻
4-6号
出版者
Elsevier Science B.V.
開始ページ
379
終了ページ
383
ISSN
0009-2614
NCID
AA00602122
資料タイプ
学術雑誌論文
言語
English
著作権者
Elsevier B.V.
論文のバージョン
author
査読
有り
DOI
Web of Sience KeyUT
Submission Path
physics_general/5