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ID 34128
フルテキストURL
著者
Nagano, Takayuki Department of Chemistry, Okayama University
Kuwahara, Eiji Department of Chemistry, Okayama University
Takayanagi, Toshio Department of Chemistry, Okayama University
Kubozono, Yoshihiro Department of Chemistry, Okayama University
Fujiwara, Akihiko CREST, Japan Science and Technology Agency
抄録

A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.

キーワード
Field effect transistors
備考
Document Objects Identifier:10.1016/j.cplett.2005.05.019
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 30 June 2005, Volume 409, Issues 4-6, Pages 187-191.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.05.019
Copyright 2005 Elsevier B.V. All rights reserved.
発行日
2005-06-30
出版物タイトル
Chemical Physics Letters
409巻
4-6号
出版者
Elsevier Science B.V.
開始ページ
187
終了ページ
191
ISSN
0009-2614
NCID
AA00602122
資料タイプ
学術雑誌論文
言語
English
著作権者
Elsevier B.V.
論文のバージョン
author
査読
有り
DOI
Web of Sience KeyUT
Submission Path
physics_general/6