Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Li, YaJun; Sun, ZeXu; Kataoka, Noriyuki; Setoguchi, Taro; Hashimoto, Yusuke; Takeuchi, Soichiro; Koga, Shunjo; Hoshi, Kazuhisa; Mizuguchi, Yoshikazu; Matsushita, Tomohiro; Wakita, Takanori; Muraoka, Yuji; Yokoya, Takayoshi

doi:10.35848/1347-4065/ad079b

Permalink : https://ousar.lib.okayama-u.ac.jp/66179

ID	66179
フルテキストURL	fulltext20231221-02.pdf 3.19 MB
著者	Li, YaJun Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University Sun, ZeXu Nara Institute of Science and Technology (NAIST) Kataoka, Noriyuki Graduate School of Natural Science and Technology, Okayama University ORCID Setoguchi, Taro Graduate School of Natural Science and Technology, Okayama University Hashimoto, Yusuke Nara Institute of Science and Technology (NAIST) Takeuchi, Soichiro Nara Institute of Science and Technology (NAIST) Koga, Shunjo Nara Institute of Science and Technology (NAIST) Hoshi, Kazuhisa Department of Physics, Tokyo Metropolitan University Mizuguchi, Yoshikazu Department of Physics, Tokyo Metropolitan University Matsushita, Tomohiro Nara Institute of Science and Technology (NAIST) Wakita, Takanori Graduate School of Natural Science and Technology, Okayama University Kaken ID publons researchmap Muraoka, Yuji Graduate School of Natural Science and Technology, Okayama University Kaken ID researchmap Yokoya, Takayoshi Graduate School of Natural Science and Technology, Okayama University ORCID Kaken ID publons researchmap
抄録	La(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi–S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder.
キーワード	photoelectron holography La(O,F)BiS2-x Se x local structure dopant site
備考	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ad079b. This fulltext file will be available in Nov. 2024.
発行日	2023-11-21
出版物タイトル	Japanese Journal of Applied Physics
巻	62巻
号	12号
出版者	IOP Publishing
開始ページ	125001
ISSN	0021-4922
NCID	AA12295836
資料タイプ	学術雑誌論文
言語	英語
OAI-PMH Set	岡山大学
著作権者	© 2023 The Japan Society of Applied Physics
論文のバージョン	author
DOI	10.35848/1347-4065/ad079b
Web of Science KeyUT	001108061600001
関連URL	isVersionOf https://doi.org/10.35848/1347-4065/ad079b
助成機関名	Japan Society for the Promotion of Science Program for Promoting the Enhancement of Research Universities Youth Doctor Support Project of the Gansu Provincial Department of Education 2023 Key Talent Project of Gansu Province
助成番号	JP18KK0076 JP20K20522 JP20H05882 2023QB-007 2023QB-007