ID | 14150 |
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Sort Key | 7
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フルテキストURL | |
著者 |
門野 恵典
Graduate School of Natural Science and Technology, Okayama University
東辻 千枝子
Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
鶴田 健二
Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
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東辻 浩夫
Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
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抄録 | We present a real-space, polynomial-expansion approach to electron dynamics in nanostructured semiconductors. The Chebyshev expansion method is employed for efficient calculation of timeevolution of single-electron wave function. Details of the formulation are described. The method is applied to the electron transport in nanostructured semiconductors such as Si nanowires. The
mean-square displacement and diffusivity of electron in Si chains are obtained as functions of length of the chains. The results show clearly ballistic behavior of electron in the pure Si chain.
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出版物タイトル |
Memoirs of the Faculty of Engineering, Okayama University
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発行日 | 2005-01
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巻 | 39巻
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号 | 1号
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出版者 | Faculty of Engineering, Okayama University
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出版者(別表記) | 岡山大学工学部
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開始ページ | 46
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終了ページ | 51
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ISSN | 0475-0071
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NCID | AA10699856
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資料タイプ |
紀要論文
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OAI-PMH Set |
岡山大学
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言語 |
英語
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論文のバージョン | publisher
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NAID | |
Eprints Journal Name | mfe
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