ID | 34132 |
フルテキストURL | |
著者 |
Fujiki, Satoshi
Graduate University for Advanced Studies
Rikiishi, Yoshie
Okayama University
Urisu, Tsuneo
Graduate University for Advanced Studies
|
抄録 | Scanning tunneling microscopy images for two isomers of Ce@C-82 were observed on Si(111)-(7x7) at 295 K. The Ce@C-82 molecules in the first layer were bound to the Si surfaces, and the motions were frozen even at 295 K. The multilayer of the Ce@C-82 isomer I (Ce@C-82-I) produced a close-packed structure in the surface layer by annealing the Si substrate at 473 K. The distance between the nearest-neighboring molecules was 1.15(4) nm whose value was consistent with that, 1.12 nm, estimated from x-ray diffraction of the Ce@C-82-I crystals. This implies that the close-packed structure is dominated by van der Waals forces, as in crystals of Ce@C-82-I. The internal structure of Ce@C-82-I was observed in the first layer due to a freeze of molecular motion caused by strong interactions between the molecule and the Si adatoms in the surface. Scanning tunneling spectroscopy revealed that the energy gaps for Ce@C-82-I and -II in the first layer opened to gap energies, E-g of 0.7 and 1.0 eV, respectively. This fact suggests that these molecules are semiconductors with smaller value of E-g than those for C-60 and C-70. |
キーワード | electronic-structure
endohedral metallofullerenes
microscopy
lanthanum
crystal
anion
films
|
備考 | Digital Object Identifer:10.1103/PhysRevB.70.235421.
Published with permission from the copyright holder. This is the institute's copy, as published in Physical Review B, February 1997, Volume 70, Issue 23, Pages 7. Publisher URL:http://dx.doi.org/10.1103/PhysRevB.70.235421 Direct access to Thomson Web of Science record Copyright © 2004 The American Physical Society. All rights reserved. |
発行日 | 1997-2
|
出版物タイトル |
Physical Review B
|
巻 | 70巻
|
号 | 23号
|
資料タイプ |
学術雑誌論文
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言語 |
英語
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査読 |
有り
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DOI | |
Web of Science KeyUT | |
Submission Path | physics_general/11
|