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ID 59908
フルテキストURL
著者
Akiba, Kazuto Graduate School of Natural Science and Technology, Okayama University
Kobayashi, Kaya Research Institute for Interdisciplinary Science, Okayama University ORCID Kaken ID publons researchmap
Kobayashi, Tatsuo C. Graduate School of Natural Science and Technology, Okayama University ORCID Kaken ID publons researchmap
Koezuka, Ryo The Institute for Solid State Physics, The University of Tokyo
Miyake, Atsushi The Institute for Solid State Physics, The University of Tokyo
Gouchi, Jun The Institute for Solid State Physics, The University of Tokyo
Yosh The Institute for Solid State Physics, The University of Tokyo
Tokunaga, Masashi The Institute for Solid State Physics, The University of Tokyo
抄録
This study investigates the transport properties of a chiral elemental semiconductor tellurium (Te) under magnetic fields and pressure. Application of hydrostatic pressure reduces the resistivity of Te, while its temperature dependence remains semiconducting up to 4 GPa, contrary to recent theoretical and experimental studies. Application of higher pressure causes structural as well as semiconductor-metal transitions. The resulting metallic phase above 4 GPa exhibits superconductivity at 2 K along with a noticeable linear magnetoresistance effect. On the other hand, at ambient pressure, we identified metallic surface states on the as-cleaved (10¯10) surfaces of Te. The nature of these metallic surface states has been systematically studied by analyzing quantum oscillations observed in high magnetic fields. We clarify that a well-defined metallic surface state exists not only on chemically etched samples that were previously reported, but also on as-cleaved ones.
発行日
2020-06-02
出版物タイトル
Physical Review B
101巻
24号
出版者
American Physical Society
開始ページ
245111
ISSN
2469-9950
NCID
AA11187113
資料タイプ
学術雑誌論文
言語
英語
OAI-PMH Set
岡山大学
著作権者
©2020 American Physical Society
論文のバージョン
publisher
DOI
Web of Science KeyUT
関連URL
isVersionOf https://doi.org/10.1103/PhysRevB.101.245111
助成機関名
文部科学省
助成番号
19K14660
19H01850
19H01852