| ID | 34151 |
| フルテキストURL | |
| 著者 |
Ochi, Kenji
Okayama University
Nagano, Takayuki
Okayama University
Ohta, Toshio
Okayama University
Nouchi, Ryo
Okayama University
Matsuoka, Yukitaka
Japan Institute of Science and Technology
Shikoh, Eiji
Japan Institute of Science and Technology
Fujiwara, Akihiko
Japan Institute of Science and Technology
|
| 抄録 | Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V?1 s?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60. |
| キーワード | device physics
C<sub>60</sub>
Eu electrodes
|
| 備考 | Digital Object Identifier:10.1063/1.2337990
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 21 August 2006, 89, 083511, (3 Pages). Publisher URL:http://dx.doi.org/10.1063/1.2337990 Copyright © 2006 American Institute of Physics. All rights reserved. |
| 発行日 | 2006-8
|
| 出版物タイトル |
Applied Physics Letters
|
| 巻 | 89巻
|
| 号 | 8号
|
| 開始ページ | 083511-1
|
| 終了ページ | 083511-3
|
| 資料タイプ |
学術雑誌論文
|
| 言語 |
英語
|
| 査読 |
有り
|
| DOI | |
| Submission Path | physics_general/1
|
