ID | 15464 |
JaLCDOI | |
Sort Key | 9
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フルテキストURL | |
著者 |
Kawamura Haruyuki
Department of Applied Chemsitry
三浦 嘉也
Department of Applied Chemsitry
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抄録 | Amorphous films of lead oxyfluorosilicate were prepared with a rf-sputtering technique, and the distribution profiles of the component elements and chemical states of the fluoride ions were analyzed with an X-ray photoelectron spectrometer. Si atoms with an expanded coordination, O(4)Si-F, were present near the surface, and O(3)Si-F units were present in the deeper part of the films. Electrical resistance indicated transition to a
conduction state for the films containing fluoride ions, while the films were crystallized to precipitate low quartz by the irradiation of He-Ne laser of 3 mW up to 1 sec.
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出版物タイトル |
Memoirs of the Faculty of Engineering, Okayama University
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発行日 | 1994-03-15
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巻 | 28巻
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号 | 2号
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出版者 | Faculty of Engineering, Okayama University
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出版者(別表記) | 岡山大学工学部
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開始ページ | 77
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終了ページ | 84
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ISSN | 0475-0071
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NCID | AA10699856
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資料タイプ |
紀要論文
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OAI-PMH Set |
岡山大学
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言語 |
英語
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論文のバージョン | publisher
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NAID | |
Eprints Journal Name | mfe
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