岡山大学環境理工学部研究報告 ISSN 2187-6940
Published by Faculty of Environmental Science and Technology, Okayama University

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活性化反応蒸着法によるZnO系透明導電膜の作製と物性

Fujiwara, Takashi
Miura, Yoshinari
Abstract
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
Keywords
ZnO film
Al doped ZnO
transparent conductive film
r.f. activated reactive evaporation method
ISSN
1341-9099
NCID
AN10529213