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ID 15432
Eprint ID
15432
フルテキストURL
著者
奈良 重俊 Department of Electrical and Electronic Engineering
Miho Shigeru Department of Electrical and Electronic Engineering
東辻 浩夫 Department of Electrical and Electronic Engineering
抄録
The structural stabilities of bulk Si, Ge, and GaAs are discussed based on the total energy evaluated by the summation of the band structure energy and the short-range repulsive potential between ions. The band structure energy is calculated by means of the simple tight-binding method. The tight-binding parameters are determined so as to fit to the results of a pseude potential calculation and Harrison's model is employed to include the influence of lattice deformation. The short-range-force is assumed to be of the exponential form and parameters are determined so as to reproduce an experimental value of bulk modulus. This treatment qualitatively well describes structural properties in spite of the simple computational procedure and roughly gives the known variation of the total energy for a <100> uniaxial strain. This method is able to be applied to an investigation of the structural stabilities of superlattices, for example, a strained layer superlattice consisting of hetero-semiconductors.
発行日
1993-11-30
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
出版物タイトル(別表記)
岡山大学工学部紀要
28巻
1号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
1
終了ページ
25
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
言語
English
論文のバージョン
publisher
査読
無し
Eprints Journal Name
mfe