このエントリーをはてなブックマークに追加
ID 15482
JaLCDOI
Sort Key
9
フルテキストURL
著者
東辻 浩夫 Department of Electrical and Electronic Engineering
畑谷 光輝 Department of Electrical and Electronic Engineering
抄録
Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effective mass approximation with appropriate boundary conditions at heterojunctions taken into account. Applying the finite element method, clarified are the effects of details of the potential profile, such as linear and smooth gradings and random fluctuations, on characteristics of superlattices which are expected to work as collector barriers and energy filters in electronic devices.
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
発行日
1989-11-29
24巻
1号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
93
終了ページ
105
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
OAI-PMH Set
岡山大学
言語
English
論文のバージョン
publisher
NAID
Eprints Journal Name
mfe