このエントリーをはてなブックマークに追加
ID 14150
JaLCDOI
Sort Key
7
フルテキストURL
著者
門野 恵典 Graduate School of Natural Science and Technology, Okayama University
東辻 千枝子 Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
鶴田 健二 Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University ORCID Kaken ID publons researchmap
東辻 浩夫 Department of Electrical and Electronic Engineering, Faculty of Engineering, Okayama University
抄録
We present a real-space, polynomial-expansion approach to electron dynamics in nanostructured semiconductors. The Chebyshev expansion method is employed for efficient calculation of timeevolution of single-electron wave function. Details of the formulation are described. The method is applied to the electron transport in nanostructured semiconductors such as Si nanowires. The mean-square displacement and diffusivity of electron in Si chains are obtained as functions of length of the chains. The results show clearly ballistic behavior of electron in the pure Si chain.
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
発行日
2005-01
39巻
1号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
46
終了ページ
51
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
OAI-PMH Set
岡山大学
言語
English
論文のバージョン
publisher
NAID
Eprints Journal Name
mfe