ID | 15436 |
JaLCDOI | |
Sort Key | 6
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フルテキストURL | |
著者 |
Sakata Naoki
Department of Applied Chemistry
Miura, Yoshinari
Department of Applied Chemistry
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抄録 | (001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
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出版物タイトル |
Memoirs of the Faculty of Engineering, Okayama University
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発行日 | 1992-03-28
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巻 | 26巻
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号 | 2号
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出版者 | Faculty of Engineering, Okayama University
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出版者(別表記) | 岡山大学工学部
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開始ページ | 69
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終了ページ | 75
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ISSN | 0475-0071
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NCID | AA10699856
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資料タイプ |
紀要論文
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OAI-PMH Set |
岡山大学
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言語 |
英語
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論文のバージョン | publisher
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NAID | |
Eprints Journal Name | mfe
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