このエントリーをはてなブックマークに追加
ID 15436
JaLCDOI
Sort Key
6
フルテキストURL
著者
Fujii, Tatsuo Department of Applied Chemistry Kaken ID publons researchmap
Sakata Naoki Department of Applied Chemistry
Nanba, Tokuro Department of Applied Chemistry ORCID Kaken ID publons researchmap
Osaka, Akiyoshi Department of Applied Chemistry ORCID Kaken ID publons researchmap
Miura, Yoshinari Department of Applied Chemistry
Takada, Jun Department of Applied Chemistry Kaken ID publons researchmap
抄録
(001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
発行日
1992-03-28
26巻
2号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
69
終了ページ
75
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
OAI-PMH Set
岡山大学
言語
English
論文のバージョン
publisher
NAID
Eprints Journal Name
mfe