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ID 48744
フルテキストURL
著者
Wakita, Takanori Research Laboratory for Surface Science (RLSS), Okayama University
Okazaki, Hiroyuki The Graduate School of Natural Science and Technology, Okayama University
Takano, Yoshihiko National Institute for Material Science (NIMS)
Hirai, Masaaki Research Laboratory for Surface Science (RLSS), Okayama University
Muraoka, Yuji Research Laboratory for Surface Science (RLSS), Okayama University
Yokoya, Takayoshi Research Laboratory for Surface Science (RLSS), Okayama University
抄録
The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.
発行日
2010-12
出版物タイトル
Physica C-Superconductivity and its Applications
470巻
S1号
出版者
Elsevier
開始ページ
S641
終了ページ
S643
ISSN
0921-4534
NCID
AA11461984
資料タイプ
学術雑誌論文
プロジェクト
エネルギー環境新素材拠点
オフィシャル URL
http://www.sciencedirect.com/science/article/pii/S0921453409007448#
言語
English
著作権者
Copyright © 2009 Elsevier B.V. All rights reserved.
論文のバージョン
author
査読
有り
DOI
Web of Sience KeyUT