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ID 48743
フルテキストURL
著者
Muraoka, Y Graduate School of Natural Science and Technology, Okayama University
Saeki, K Graduate School of Natural Science and Technology, Okayama University
Yao, Y Graduate School of Natural Science and Technology, Okayama University
Wakita, T Faculty of Science, Research Laboratory for Surface Science, Okayama University
Hirai, M Graduate School of Natural Science and Technology, Okayama University
Yokoya, T Graduate School of Natural Science and Technology, Okayama University
Eguchi, R RIKEN/SPring-8
Shin, S RIKEN/SPring-8
抄録
We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal–insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3–8 eV along the Г–Z direction. The periodicity of the dispersive band is found to be 2.2 Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.
キーワード
ARPES
VO<sub>2</sub>
Thin film
発行日
2010-08
出版物タイトル
Journal of Electron Spectroscopy and Related Phenomena
181巻
2-3号
出版者
Elsevier
開始ページ
249
終了ページ
251
ISSN
0368-2048
NCID
AA00697082
資料タイプ
学術雑誌論文
プロジェクト
エネルギー環境新素材拠点
オフィシャル URL
http://www.sciencedirect.com/science/article/pii/S0368204810000149
言語
English
著作権者
Copyright © 2010 Elsevier B.V. All rights reserved.
論文のバージョン
author
査読
有り
DOI
Web of Sience KeyUT