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ID 32961
フルテキストURL
著者
Kishimoto, Akira Division of Chemistry and Biochemistry, Graduate School of Natural Science and Technology, Okayama University
Okada, Yasuyuki Division of Chemistry and Biochemistry, Graduate School of Natural Science and Technology, Okayama University
Hayashi, Hidetaka Division of Chemistry and Biochemistry, Graduate School of Natural Science and Technology, Okayama University
抄録
The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with various ratios. The resultant aluminum nitride added silicon carbide ceramics were doped with nitrogen by changing the post-HIP nitrogen gas pressure. The lattice parameter increased with the amount of adding aluminum nitride indicating that the incorporated aluminum substituted smaller silicon atoms. After post-HIP treatment, lattice parameter then decreased with nitrogen gas pressure. The piezoresistive coefficient increased with the addition of aluminum nitride, it further increased with the nitrogen doping pressure.
キーワード
HIP
co-doping
donor
acceptor
silicon carbide
strain sensor
備考
Published with permission from the copyright holder.
This is a author's copy,as published in Ceramics International , 2008 Vol.34 Issue.4 pp.845-848
Publisher URL: http://dx.doi.org/10.1016/j.ceramint.2007.09.033
Direct access to Thomson Web of Science record
Copyright © 2007 Elsevier Ltd and Techna Group S.r.l.
発行日
2008-05
出版物タイトル
Ceramics International
34巻
4号
出版者
Elsevier Science Ltd
開始ページ
845
終了ページ
848
ISSN
0272-8842
NCID
AA10622625
資料タイプ
学術雑誌論文
言語
English
OAI-PMH Set
岡山大学
著作権者
Elsevier Ltd and Techna Group S.r.l.
論文のバージョン
author
査読
有り
DOI
Web of Sience KeyUT
Submission Path
materials_science/1