ID | 34153 |
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著者 |
Yamashita, Yoshifumi
The Graduate School of Natural Science and Technology, Okayama University
Kaken ID
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Sakamoto, Yoshifumi
The Graduate School of Natural Science and Technology, Okayama University
Kamiura, Yoichi
The Graduate School of Natural Science and Technology, Okayama University
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publons
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Ishiyama, Takeshi
The Graduate School of Natural Science and Technology, Okayama University
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抄録 | We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen. |
キーワード | SiGe/Si
Hydroge. Resistivity reduction
Interface
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備考 | Published with permission from the copyright holder.
This is a author's copy,as published in Physica B-Condensed Matter , 2007 Vol.401 pp.218-221 Publisher URL: http://dx.doi.org/10.1016/j.physb.2007.08.150 Direct access to Thomson Web of Science record Copyright © 2007 by Elsevier B.V. |
発行日 | 2008-06-29
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出版物タイトル |
Physica B-Condensed Matter
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巻 | 401巻
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開始ページ | 218
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終了ページ | 221
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資料タイプ |
学術雑誌論文
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言語 |
英語
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査読 |
有り
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DOI | |
Web of Science KeyUT | |
Submission Path | physics_general/31
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