ID | 57495 |
フルテキストURL | |
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Yokoya, T.
Research Institute for Interdisciplinary Science (RIIS), Okayama University
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Terashima, K.
Research Institute for Interdisciplinary Science (RIIS), Okayama University
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Takeda, A.
Graduate School of Science and Technology, Okayama University
Fukura, T.
Graduate School of Science and Technology, Okayama University
Fujiwara, H.
Graduate School of Science and Technology, Okayama University
Muro, T.
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
Kinoshita, T.
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
Kato, H.
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Yamasaki, S.
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Oguchi, T.
Institute of Scientific and Industrial Research, Osaka University
Wakita, T.
Research Institute for Interdisciplinary Science (RIIS), Okayama University
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Muraoka, Y.
Research Institute for Interdisciplinary Science (RIIS), Okayama University
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Matsushita, T.
Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
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抄録 | Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond.
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キーワード | Dopant local structure
asymmetric dopant incorporation
diamond
dopant-vacancy complex
photoelectron holography
substitutional doping
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備考 | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01481.
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発行日 | 2019-08-02
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出版物タイトル |
Nano Letters
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巻 | 19巻
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号 | 9号
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出版者 | American Chemical Society
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開始ページ | 5915
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終了ページ | 5919
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ISSN | 15306984
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NCID | AA11511812
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資料タイプ |
学術雑誌論文
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言語 |
英語
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OAI-PMH Set |
岡山大学
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論文のバージョン | author
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関連URL | isVersionOf https://doi.org/10.1021/acs.nanolett.9b01481
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Citation | Nano Lett. 2019, 19, 9, 5915-5919 Publication Date:August 2, 2019 https://doi.org/10.1021/acs.nanolett.9b01481
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助成機関名 |
文部科学省
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助成番号 | 26105007
26105013
17H05220
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