start-ver=1.4
cd-journal=joma
no-vol=143
cd-vols=
no-issue=
article-no=
start-page=110894
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2024
dt-pub=202403
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=First-principles molecular dynamics simulations for the properties of boron-doped tetrahedral amorphous carbon
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=Based on first-principles molecular dynamics (FPMD) simulations combined with a liquid quenching method, we study the effects of boron doping at 0 %, 2 %, 4 %, 6 % on the properties of tetrahedral amorphous carbon (ta-C) with an initial density of 3.0 g/cm3. The results of bond structures and internal stress show the promotion of graphitization with increase in the concentration of boron doping. In addition, simulation of electronic states reveals that the Fermi level shifts to valence band and the intensity of density of electronic states near Fermi level increases with the boron concentration increasing. A covalent bond formation between carbon and boron atoms is also shown by analyzing projected densities of electronic states (PDOS) and electron density distribution. The results of electronic state and bond formation strongly indicate that the boron-doped ta-C is like a p-type semiconductor. The present simulation results provide useful information for deeper understanding on the physical properties of boron-doped ta-C.
en-copyright=
kn-copyright=

en-aut-name=YueQiang
en-aut-sei=Yue
en-aut-mei=Qiang
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

affil-num=1
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=2
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=3
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=
en-keyword=Boron-doped tetrahedral amorphous carbon
kn-keyword=Boron-doped tetrahedral amorphous carbon
en-keyword=First-principles molecular dynamics
kn-keyword=First-principles molecular dynamics
en-keyword=Liquid quenching method
kn-keyword=Liquid quenching method
END

start-ver=1.4
cd-journal=joma
no-vol=140
cd-vols=
no-issue=
article-no=
start-page=110514
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2023
dt-pub=202312
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Molecular dynamics simulation of deposition of amorphous carbon films on sapphire surfaces
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=The growth of amorphous carbon films on a sapphire surface was investigated using classical molecular dynamics simulation. The kinetic energy of carbon particles was set as 10 eV and ReaxFF potential was used to express the interaction between different kinds of particles. The results of the temperature distribution in both deposition time and deposition space are reported. Simulation results reveal that the grown amorphous carbon film consists of four regions, namely interlayer, low density, stable growth, and surface regions. In the interlayer region, the interlayer between substrate and pure carbon film is formed. In the low density region, a pure carbon film is grown while the film density decreases initially and then increases. In the stable growth region, the film density remains almost constant. The film density decreases rapidly in the surface region. The radial distribution function (RDF) analysis suggests that a structure similar to that of diamond exists in the stable growth region of the film. The lower film density in the low density and surface regions was interpreted to indicate the existence of abundant sp1 chain structures, which is supported by the depth profile of the sp fractions. The present results are in good agreement with previous experimental and simulation results and demonstrate the suitability of the ReaxFF potential in the simulation of amorphous carbon growth on sapphire substrate. Our study provides a good starting point for the simulation study of amorphous carbon films on sapphire substrates.
en-copyright=
kn-copyright=

en-aut-name=YueQiang
en-aut-sei=Yue
en-aut-mei=Qiang
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

affil-num=1
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=2
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=3
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=
en-keyword=Amorphous carbon
kn-keyword=Amorphous carbon
en-keyword=Sapphire substrate
kn-keyword=Sapphire substrate
en-keyword=Molecular dynamics simulation
kn-keyword=Molecular dynamics simulation
en-keyword=Empirical potential
kn-keyword=Empirical potential
END

start-ver=1.4
cd-journal=joma
no-vol=62
cd-vols=
no-issue=12
article-no=
start-page=125001
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2023
dt-pub=20231121
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=La(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi?S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder.
en-copyright=
kn-copyright=

en-aut-name=LiYaJun
en-aut-sei=Li
en-aut-mei=YaJun
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=SunZeXu
en-aut-sei=Sun
en-aut-mei=ZeXu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=KataokaNoriyuki
en-aut-sei=Kataoka
en-aut-mei=Noriyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=SetoguchiTaro
en-aut-sei=Setoguchi
en-aut-mei=Taro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=HashimotoYusuke
en-aut-sei=Hashimoto
en-aut-mei=Yusuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=TakeuchiSoichiro
en-aut-sei=Takeuchi
en-aut-mei=Soichiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=KogaShunjo
en-aut-sei=Koga
en-aut-mei=Shunjo
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=HoshiKazuhisa
en-aut-sei=Hoshi
en-aut-mei=Kazuhisa
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=MizuguchiYoshikazu
en-aut-sei=Mizuguchi
en-aut-mei=Yoshikazu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=MatsushitaTomohiro
en-aut-sei=Matsushita
en-aut-mei=Tomohiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

affil-num=1
en-affil=Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University
kn-affil=

affil-num=2
en-affil=Nara Institute of Science and Technology (NAIST)
kn-affil=

affil-num=3
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=4
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=5
en-affil=Nara Institute of Science and Technology (NAIST)
kn-affil=

affil-num=6
en-affil=Nara Institute of Science and Technology (NAIST)
kn-affil=

affil-num=7
en-affil=Nara Institute of Science and Technology (NAIST)
kn-affil=

affil-num=8
en-affil=Department of Physics, Tokyo Metropolitan University
kn-affil=

affil-num=9
en-affil=Department of Physics, Tokyo Metropolitan University
kn-affil=

affil-num=10
en-affil=Nara Institute of Science and Technology (NAIST)
kn-affil=

affil-num=11
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=12
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=13
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=
en-keyword=photoelectron holography
kn-keyword=photoelectron holography
en-keyword=La(O,F)BiS2-x Se x
kn-keyword=La(O,F)BiS2-x Se x
en-keyword=local structure
kn-keyword=local structure
en-keyword=dopant site
kn-keyword=dopant site
END

start-ver=1.4
cd-journal=joma
no-vol=6
cd-vols=
no-issue=
article-no=
start-page=148
end-page=165
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2021
dt-pub=20211230
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Advances in Superconductivity as a road to meet Energy and Health SDGs: joint Japanese and European research teams may take the lead
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=Based on a statistical analysis of R&D activities in the field of superconductivity (SC) in a broad sense, the paper reports that Japan's leadership is strong over the past 20 years, in terms of researchers publications and patents. It also essentially shows that among the main world players, the Japanese normalized contribution is significantly dominating, although some trend towards a diminished leadership is observed in the data over the period 2005 -present time. Finally, the paper highlights that by taking advantage of their internationally recognized expertise in the field, joint Japanese and European research teams may advance superconductivity as a reliable road to meet Energy and Health SDGs (Sustainable Development Goals -UNESCO 2015).
en-copyright=
kn-copyright=

en-aut-name=KiwaToshihiko
en-aut-sei=Kiwa
en-aut-mei=Toshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=ChenevierBernard
en-aut-sei=Chenevier
en-aut-mei=Bernard
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=CosmoValeria Di 
en-aut-sei=Cosmo
en-aut-mei=Valeria Di 
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=TruccatoMarco
en-aut-sei=Truccato
en-aut-mei=Marco
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=SacksWilliam
en-aut-sei=Sacks
en-aut-mei=William
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=SauerweinWolfgang
en-aut-sei=Sauerwein
en-aut-mei=Wolfgang
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

affil-num=1
en-affil=Okayama University
kn-affil=

affil-num=2
en-affil=Okayama University
kn-affil=

affil-num=3
en-affil=Okayama University
kn-affil=

affil-num=4
en-affil=University of Turin
kn-affil=

affil-num=5
en-affil=University of Turin
kn-affil=

affil-num=6
en-affil=Sorbonne University, Faculty of Science and Engineering, Paris
kn-affil=

affil-num=7
en-affil=DGBNCT (Deutsche Gesellschaft f?r Bor-Neutroneneinfangtherapie e.V.) and University of Duisburg-Essen
kn-affil=
en-keyword=Statistical review of superconductivity-related achievements
kn-keyword=Statistical review of superconductivity-related achievements
en-keyword=energy
kn-keyword=energy
en-keyword=health
kn-keyword=health
en-keyword=Okayama University and SDGs
kn-keyword=Okayama University and SDGs
en-keyword=joint Japanese and European leadership in superconductivity
kn-keyword=joint Japanese and European leadership in superconductivity
END

start-ver=1.4
cd-journal=joma
no-vol=33
cd-vols=
no-issue=3
article-no=
start-page=035501
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2020
dt-pub=20201016
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Soft x-ray irradiation induced metallization of layered TiNCl
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have performed soft x-ray spectroscopy in order to study the photoirradiation time dependence of the valence band structure and chemical states of layered transition metal nitride chloride TiNCl. Under the soft x-ray irradiation, the intensities of the states near the Fermi level (EF) and the Ti3+ component increased, while the Cl 2p intensity decreased. Ti 2p?3d resonance photoemission spectroscopy confirmed a distinctive Fermi edge with Ti 3d character. These results indicate the photo-induced metallization originates from deintercalation due to Cl desorption, and thus provide a new carrier doping method that controls the conducting properties of TiNCl.
en-copyright=
kn-copyright=

en-aut-name=KataokaNoriyuki
en-aut-sei=Kataoka
en-aut-mei=Noriyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=TanakaMasashi
en-aut-sei=Tanaka
en-aut-mei=Masashi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=HosodaWataru
en-aut-sei=Hosoda
en-aut-mei=Wataru
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=TaniguchiTakumi
en-aut-sei=Taniguchi
en-aut-mei=Takumi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=FujimoriShin-ichi
en-aut-sei=Fujimori
en-aut-mei=Shin-ichi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

affil-num=1
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=2
en-affil=Graduate School of Engineering, Kyushu Institute of Technology
kn-affil=

affil-num=3
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=4
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=5
en-affil=Materials Sciences Research Center, Japan Atomic Energy Agency
kn-affil=

affil-num=6
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=7
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=8
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=
END

start-ver=1.4
cd-journal=joma
no-vol=10
cd-vols=
no-issue=1
article-no=
start-page=10702
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2020
dt-pub=20200701
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapidly developing. However, because the actual ferroelectric band structure has not been elucidated, precise designing of devices has to be advanced through appropriate heuristics. Here, we perform angle-resolved hard X-ray photoemission spectroscopy of ferroelectric BaTiO3 thin films for the direct observation of ferroelectric band skewing structure as the depth profiles of atomic orbitals. The depth-resolved electronic band structure consists of three depth regions: a potential slope along the electric polarization in the core, the surface and interface exhibiting slight changes. We also demonstrate that the direction of the energy shift is controlled by the polarization reversal. In the ferroelectric skewed band structure, we found that the difference in energy shifts of the atomic orbitals is correlated with the atomic configuration of the soft phonon mode reflecting the Born effective charges. These findings lead to a better understanding of the origin of electric polarization.
en-copyright=
kn-copyright=

en-aut-name=OshimeNorihiro
en-aut-sei=Oshime
en-aut-mei=Norihiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=KanoJun
en-aut-sei=Kano
en-aut-mei=Jun
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=IkenagaEiji
en-aut-sei=Ikenaga
en-aut-mei=Eiji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=YasuiShintaro
en-aut-sei=Yasui
en-aut-mei=Shintaro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=HamasakiYosuke
en-aut-sei=Hamasaki
en-aut-mei=Yosuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=YasuharaSou
en-aut-sei=Yasuhara
en-aut-mei=Sou
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=HinokumaSatoshi
en-aut-sei=Hinokuma
en-aut-mei=Satoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=IkedaNaoshi
en-aut-sei=Ikeda
en-aut-mei=Naoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=JanolinPierre-Eymeric
en-aut-sei=Janolin
en-aut-mei=Pierre-Eymeric
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=KiatJean-Michel
en-aut-sei=Kiat
en-aut-mei=Jean-Michel
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=ItohMitsuru
en-aut-sei=Itoh
en-aut-mei=Mitsuru
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=FujiiTatsuo
en-aut-sei=Fujii
en-aut-mei=Tatsuo
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

en-aut-name=YasuiAkira
en-aut-sei=Yasui
en-aut-mei=Akira
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=14
ORCID=

en-aut-name=OsawaHitoshi
en-aut-sei=Osawa
en-aut-mei=Hitoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=15
ORCID=

affil-num=1
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=2
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=3
en-affil=Japan Synchrotron Radiation Research Institute, JASRI
kn-affil=

affil-num=4
en-affil=Laboratory for Materials and Structures, Tokyo Institute of Technology
kn-affil=

affil-num=5
en-affil=Laboratory for Materials and Structures, Tokyo Institute of Technology
kn-affil=

affil-num=6
en-affil=Laboratory for Materials and Structures, Tokyo Institute of Technology
kn-affil=

affil-num=7
en-affil=Innovative Oxidation Team, Interdisciplinary Research Center for Catalytic Chemistry, National Institute of Advanced Industrial Science and Technology
kn-affil=

affil-num=8
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=9
en-affil=Universit? Paris-Saclay,CentraleSup?lec, CNRS, Laboratoire SPMS
kn-affil=

affil-num=10
en-affil=Universit? Paris-Saclay,CentraleSup?lec, CNRS, Laboratoire SPMS
kn-affil=

affil-num=11
en-affil=Laboratory for Materials and Structures, Tokyo Institute of Technology
kn-affil=

affil-num=12
en-affil=GResearch Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=13
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=14
en-affil=Japan Synchrotron Radiation Research Institute, JASRI
kn-affil=

affil-num=15
en-affil=Japan Synchrotron Radiation Research Institute, JASRI
kn-affil=
END

start-ver=1.4
cd-journal=joma
no-vol=698
cd-vols=
no-issue=
article-no=
start-page=137854
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2020
dt-pub=202003
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Strain effects on spinodal decomposition in TiO2-VO(2)films on TiO2(100) substrates
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract= We investigate the influence of lattice strain in the c-axis direction on spinodal decomposition in rutile TiO2-VO2 films on TiO2(100) substrates. The [100]-oriented Ti0.4V0.6O2 (TVO) solid-solution films are fabricated on rutile TiO2(100) substrates using a pulsed laser deposition with a KrF excimer laser, and are annealed inside the spinodal region. X-ray diffraction and scanning transmission electron microscopy are employed for characterization. Consequently, the in-plane tensile strain in the c-axis direction promotes the Ti-V interdiffusion in TVO/TiO2(100) under thermal annealing. In contrast, relaxation of the tensile strain results in the occurrence of spinodal decomposition along the c-axis direction in the film. These results indicate that the relaxation of the tensile strain in the c-axis direction is critically important for enabling spinodal decomposition in TVO/TiO2(100). Our work helps deepen the understanding of spinodal decomposition in the TVO film and provides information on achieving novel nanostructures via spinodal decomposition in TVO/TiO2(100).
en-copyright=
kn-copyright=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YoshiiFumiya
en-aut-sei=Yoshii
en-aut-mei=Fumiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=FukudaTakahiro
en-aut-sei=Fukuda
en-aut-mei=Takahiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=ManabeYuji
en-aut-sei=Manabe
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=YasunoMikiko
en-aut-sei=Yasuno
en-aut-mei=Mikiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=TakemotoYoshito
en-aut-sei=Takemoto
en-aut-mei=Yoshito
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=TerashimaKensei
en-aut-sei=Terashima
en-aut-mei=Kensei
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

affil-num=1
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=2
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=3
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=4
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=5
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=6
en-affil=Graduate School of Natural Science and Technology, Okayama University
kn-affil=

affil-num=7
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=8
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=9
en-affil=
kn-affil=
en-keyword=Strain effect
kn-keyword=Strain effect
en-keyword=Spinodal decomposition
kn-keyword=Spinodal decomposition
en-keyword=Titanium dioxide
kn-keyword=Titanium dioxide
en-keyword=Vanadium dioxide
kn-keyword=Vanadium dioxide
en-keyword=Thin films
kn-keyword=Thin films
en-keyword=Interdiffusion
kn-keyword=Interdiffusion
en-keyword=Nanostructure
kn-keyword=Nanostructure
en-keyword=Pulsed laser deposition
kn-keyword=Pulsed laser deposition
END

start-ver=1.4
cd-journal=joma
no-vol=9
cd-vols=
no-issue=
article-no=
start-page=5376
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2019
dt-pub=2019329
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Fermi level tuning of Ag-doped Bi2Se3 topological insulator
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=The temperature dependence of the resistivity (rho) of Ag-doped Bi2Se3 (AgxBi2-xSe3) shows insulating behavior above 35 K, but below 35 K, rho suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi2Se3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgxBi2-xSe3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgxBi2-xSe3 provides metallic behavior that is similar to that of non-doped Bi2Se3, indicating a successful upward tuning of the Fermi level.
en-copyright=
kn-copyright=

en-aut-name=UesugiEri
en-aut-sei=Uesugi
en-aut-mei=Eri
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=UchiyamaTakaki
en-aut-sei=Uchiyama
en-aut-mei=Takaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=GotoHidenori
en-aut-sei=Goto
en-aut-mei=Hidenori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=OtaHiromi
en-aut-sei=Ota
en-aut-mei=Hiromi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=UenoTeppei
en-aut-sei=Ueno
en-aut-mei=Teppei
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=FujiwaraHirokazu
en-aut-sei=Fujiwara
en-aut-mei=Hirokazu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=TerashimaKensei
en-aut-sei=Terashima
en-aut-mei=Kensei
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=MatsuiFumihiko
en-aut-sei=Matsui
en-aut-mei=Fumihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=AkimitsuJun
en-aut-sei=Akimitsu
en-aut-mei=Jun
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=KobayashiKaya
en-aut-sei=Kobayashi
en-aut-mei=Kaya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=KubozonoYoshihiro
en-aut-sei=Kubozono
en-aut-mei=Yoshihiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

affil-num=1
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=2
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=3
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=4
en-affil= Advanced Science Research Centre, Okayama University
kn-affil=

affil-num=5
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=6
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=7
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=8
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=9
en-affil=Graduate School of Materials Science, Nara Institute of Science and Technology
kn-affil=

affil-num=10
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=11
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=

affil-num=12
en-affil=Research Institute for Interdisciplinary Science, Okayama University
kn-affil=
END

start-ver=1.4
cd-journal=joma
no-vol=19
cd-vols=
no-issue=9
article-no=
start-page=5915
end-page=5919
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2019
dt-pub=20190802
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract= Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond.
en-copyright=
kn-copyright=

en-aut-name=YokoyaT.
en-aut-sei=Yokoya
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=TerashimaK.
en-aut-sei=Terashima
en-aut-mei=K.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=TakedaA.
en-aut-sei=Takeda
en-aut-mei=A.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=FukuraT.
en-aut-sei=Fukura
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=FujiwaraH.
en-aut-sei=Fujiwara
en-aut-mei=H.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=MuroT.
en-aut-sei=Muro
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=KinoshitaT.
en-aut-sei=Kinoshita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=KatoH.
en-aut-sei=Kato
en-aut-mei=H.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=YamasakiS.
en-aut-sei=Yamasaki
en-aut-mei=S.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=OguchiT.
en-aut-sei=Oguchi
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=WakitaT.
en-aut-sei=Wakita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=MuraokaY.
en-aut-sei=Muraoka
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=MatsushitaT.
en-aut-sei=Matsushita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

affil-num=1
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=2
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=3
en-affil=Graduate School of Science and Technology, Okayama University
kn-affil=

affil-num=4
en-affil=Graduate School of Science and Technology, Okayama University
kn-affil=

affil-num=5
en-affil=Graduate School of Science and Technology, Okayama University
kn-affil=

affil-num=6
en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
kn-affil=

affil-num=7
en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
kn-affil=

affil-num=8
en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
kn-affil=

affil-num=9
en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
kn-affil=

affil-num=10
en-affil=Institute of Scientific and Industrial Research, Osaka University
kn-affil=

affil-num=11
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=12
en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University
kn-affil=

affil-num=13
en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
kn-affil=
en-keyword=Dopant local structure
kn-keyword=Dopant local structure
en-keyword=asymmetric dopant incorporation
kn-keyword=asymmetric dopant incorporation
en-keyword=diamond
kn-keyword=diamond
en-keyword=dopant-vacancy complex
kn-keyword=dopant-vacancy complex
en-keyword=photoelectron holography
kn-keyword=photoelectron holography
en-keyword=substitutional doping
kn-keyword=substitutional doping
END

start-ver=1.4
cd-journal=joma
no-vol=90
cd-vols=
no-issue=22
article-no=
start-page=
end-page=
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2014
dt-pub=20141222
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=The electronic structure of nearly optimally doped novel superconductor LaO1?xFxBiS2(x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change.
en-copyright=
kn-copyright=

en-aut-name=TerashimaKensei
en-aut-sei=Terashima
en-aut-mei=Kensei
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=SonoyamaJunki
en-aut-sei=Sonoyama
en-aut-mei=Junki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=SunagawaMasanori
en-aut-sei=Sunagawa
en-aut-mei=Masanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=OnoKanta
en-aut-sei=Ono
en-aut-mei=Kanta
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=KumigashiraHiroshi
en-aut-sei=Kumigashira
en-aut-mei=Hiroshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=MuroTakayuki
en-aut-sei=Muro
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=NagaoMasanori
en-aut-sei=Nagao
en-aut-mei=Masanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=WatauchiSatoshi
en-aut-sei=Watauchi
en-aut-mei=Satoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=TanakaIsao
en-aut-sei=Tanaka
en-aut-mei=Isao
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=TakanoYoshihiko
en-aut-sei=Takano
en-aut-mei=Yoshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=MiuraOsuke
en-aut-sei=Miura
en-aut-mei=Osuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

en-aut-name=MizuguchiYoshikazu
en-aut-sei=Mizuguchi
en-aut-mei=Yoshikazu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=14
ORCID=

en-aut-name=UsuiHidetomo
en-aut-sei=Usui
en-aut-mei=Hidetomo
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=15
ORCID=

en-aut-name=SuzukiKatsuhiro
en-aut-sei=Suzuki
en-aut-mei=Katsuhiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=16
ORCID=

en-aut-name=KurokiKazuhiko
en-aut-sei=Kuroki
en-aut-mei=Kazuhiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=17
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=18
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=19
ORCID=

affil-num=1
en-affil=
kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University

affil-num=2
en-affil=
kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University

affil-num=3
en-affil=
kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University

affil-num=4
en-affil=
kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University

affil-num=5
en-affil=
kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory

affil-num=6
en-affil=
kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory

affil-num=7
en-affil=
kn-affil=Japan Synchrtron Radiation Research Institute (JASRI)/SPring-8

affil-num=8
en-affil=
kn-affil=Center for Crystal Science and Technology, University of Yamanashi

affil-num=9
en-affil=
kn-affil=Center for Crystal Science and Technology, University of Yamanashi

affil-num=10
en-affil=
kn-affil=Center for Crystal Science and Technology, University of Yamanashi

affil-num=11
en-affil=
kn-affil=National Institute for Materials Science

affil-num=12
en-affil=
kn-affil=National Institute for Materials Science

affil-num=13
en-affil=
kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University

affil-num=14
en-affil=
kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University

affil-num=15
en-affil=
kn-affil=Department of Physics, Osaka University

affil-num=16
en-affil=
kn-affil=Department of Physics, Osaka University

affil-num=17
en-affil=
kn-affil=Department of Physics, Osaka University

affil-num=18
en-affil=
kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University

affil-num=19
en-affil=
kn-affil=1Graduate School of Natural Science and Technology and Research Laboratory for Surface Science
END

start-ver=1.4
cd-journal=joma
no-vol=98
cd-vols=
no-issue=8
article-no=
start-page=082107-1
end-page=082107-3
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2011
dt-pub=20110221
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Multiple phosphorus chemical sites in heavily phosphorus-doped diamond
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed.
en-copyright=
kn-copyright=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=MuroTakayuki
en-aut-sei=Muro
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=NakamuraTetsuya
en-aut-sei=Nakamura
en-aut-mei=Tetsuya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=KatoHiromitsu
en-aut-sei=Kato
en-aut-mei=Hiromitsu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=YamasakiSatoshi
en-aut-sei=Yamasaki
en-aut-mei=Satoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=TakanoYoshihiko
en-aut-sei=Takano
en-aut-mei=Yoshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=IshiiSatoshi
en-aut-sei=Ishii
en-aut-mei=Satoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=OguchiTamio
en-aut-sei=Oguchi
en-aut-mei=Tamio
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=4
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=5
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=8
en-affil=
kn-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

affil-num=9
en-affil=
kn-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

affil-num=10
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=11
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=12
en-affil=
kn-affil=Institute of Scientific and Industrial Research, Osaka University

affil-num=13
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=109
cd-vols=
no-issue=4
article-no=
start-page=043702-1
end-page=043702-6
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2011
dt-pub=20110215
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Spectroscopic evidence of the formation of (V,Ti)O<sub>2</sub> solid solution in VO<sub>2</sub> thinner films grown on TiO<sub>2</sub>(001) substrates
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have prepared VO2 thin films epitaxially grown on TiO2(001) substrates with thickness systematically varied from 2.5 to 13 nm using a pulsed laser deposition method, and studied the transport property and electronic states of the films by means of resistivity and in situ synchrotron photoemission spectroscopy (SRPES). In resistivity measurements, the 13-nm-thick film exhibits a metal-insulator transition at around 290 K on cooling with change of three orders of magnitudes in resistivity. As the film thickness decreases, the metal-insulator transition broadens and the transition temperature increases. Below 4 nm, the films do not show the transition and become insulators. In situ SRPES measurements of near the Fermi level valence band find that the electronic state of the 2.5-nm-thick film is different than that of the temperature-induced insulator phase of VO2 itself although these two states are insulating. Ti 2p core-level photoemission measurements reveal that Ti ions exist near the interface between the films and TiO2 substrates, with a chemical state similar to that in (V,Ti)O-2 solid solution. These results indicate that insulating (V,Ti)O-2 solid solution is formed in the thinner films. We propose a simple growth model of a VO2 thin film on a TiO2(001) substrate. Near the interface, insulating (V,Ti) O-2 solid solution is formed due to the diffusion of Ti ions from the TiO2 substrate into the VO2 film. The concentration of Ti in (V,Ti) O-2 is relatively high near the interface and decreases toward the surface of the film. Beyond a certain film thickness (about 7 nm in the case of the present 13-nm-thick film), the VO2 thin film without any Ti ions starts to grow. Our work suggests that developing a technique for preparing the sharp interface between the VO2 thin films and TiO2 substrates is a key issue to study the physical property of an ultrathin film of "pure" VO2, especially to examine the presence of the novel electronic state called a semi-Dirac point phase predicted by calculations.
en-copyright=
kn-copyright=

en-aut-name=MuraokaY.
en-aut-sei=Muraoka
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=SaekiK.
en-aut-sei=Saeki
en-aut-mei=K.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=EguchiR.
en-aut-sei=Eguchi
en-aut-mei=R.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=WakitaT.
en-aut-sei=Wakita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=HiraiM.
en-aut-sei=Hirai
en-aut-mei=M.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=YokoyaT.
en-aut-sei=Yokoya
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=ShinS.
en-aut-sei=Shin
en-aut-mei=S.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

affil-num=1
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=RIKEN/SPring-8
END

start-ver=1.4
cd-journal=joma
no-vol=108
cd-vols=
no-issue=4
article-no=
start-page=043916-1
end-page=043916-4
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20100815
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Bulk and surface physical properties of a CrO<sub>2</sub> thin film prepared from a Cr<sub>8</sub>O<sub>21</sub> precursor
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have prepared a CrO(2) thin film by chemical vapor deposition from a Cr(8)O(21) precursor and studied the bulk and surface physical properties. The CrO(2) thin film is grown on a TiO(2) (100) substrate by heating of a Cr(8)O(21) precursor and TiO(2) (100) substrate together in a sealed quartz tube. The prepared film is found from x-ray diffraction analysis to be an (100)-oriented single phase. The magnetization and resistivity measurements indicate that the film is a ferromagnetic metal with a Curie temperature of about 400 K. Cr 3s core-level and valence band photoelectron spectroscopy spectra reveal the presence of a metallic CrO(2) in the surface region of the film. Our work indicates that preparation from a Cr(8)O(21) precursor is promising for obtaining a CrO(2) thin film with the metallic surface.
en-copyright=
kn-copyright=

en-aut-name=IwaiK.
en-aut-sei=Iwai
en-aut-mei=K.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=MuraokaY.
en-aut-sei=Muraoka
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=WakitaT.
en-aut-sei=Wakita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=HiraiM.
en-aut-sei=Hirai
en-aut-mei=M.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=YokoyaT.
en-aut-sei=Yokoya
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=KatoY.
en-aut-sei=Kato
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=MuroT.
en-aut-sei=Muro
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=TamenoriY.
en-aut-sei=Tamenori
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

affil-num=1
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Faculty of Science, Research Laboratory for Surface Science, Okayama University

affil-num=4
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=7
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=8
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8
END

start-ver=1.4
cd-journal=joma
no-vol=107
cd-vols=
no-issue=7
article-no=
start-page=073910-1
end-page=073910-6
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20100401
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Room temperature ferromagnetic behavior in the hollandite-type titanium oxide
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=A hollandite-type K(x)Ti(8)O(16) polycrystalline sample has been prepared and studied by magnetization, resistivity and x-ray photoelectron spectroscopy (XPS). Room temperature ferromagnetic behavior is observed in the magnetic hysteresis measurement. The sample shows a semiconductive temperature dependence in the resistivity measurement. Analysis of the Ti 2p(3/2) core-level XPS spectrum indicates that the titanium ions have a mixed valence of Ti(4+) and Ti(3+). In addition, the valence band spectrum reveals that the 3d electrons tend to localize on Ti(3+) ions in the hollandite-type TiO(2) lattice. Also, analysis of the valence band spectrum shows that the prepared sample is a wide-gap oxide with a band gap of 3.6 eV. These results indicate that the present hollandite-type K(x)Ti(8)O(16) sample can be classified as a TiO(2)-based wide-gap semiconductor with Curie temperature above room temperature. Room temperature ferromagnetism (RTFM) decreases in the sample prepared under a strong reducing gas atmosphere, accompanied with the decrease in the resistivity. The results imply that the localized 3d electrons are responsible for the RTFM of the K(x)Ti(8)O(16) sample.
en-copyright=
kn-copyright=

en-aut-name=NoamiK.
en-aut-sei=Noami
en-aut-mei=K.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=MuraokaY.
en-aut-sei=Muraoka
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=WakitaT.
en-aut-sei=Wakita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=HiraiM.
en-aut-sei=Hirai
en-aut-mei=M.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=KatoY.
en-aut-sei=Kato
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=MuroT.
en-aut-sei=Muro
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=TamenoriY.
en-aut-sei=Tamenori
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=YokoyaT.
en-aut-sei=Yokoya
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

affil-num=1
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Faculty of Science, Research Laboratory for Surface Science, Okayama University

affil-num=4
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=6
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=7
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=8
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=72
cd-vols=
no-issue=5
article-no=
start-page=582
end-page=584
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2011
dt-pub=20110501
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Photoemission study of electronic structure evolution across the metal-insulator transition of heavily B-doped diamond
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E(F)) up to similar to 5k(B)T can be observed (k(B) is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E(F). Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E(F), can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.
en-copyright=
kn-copyright=

en-aut-name=OkazakiH.
en-aut-sei=Okazaki
en-aut-mei=H.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=ArakaneT.
en-aut-sei=Arakane
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=SugawaraK.
en-aut-sei=Sugawara
en-aut-mei=K.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=SatoT.
en-aut-sei=Sato
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=TakahashiT.
en-aut-sei=Takahashi
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=WakitaT.
en-aut-sei=Wakita
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=HiraiM.
en-aut-sei=Hirai
en-aut-mei=M.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=MuraokaY.
en-aut-sei=Muraoka
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=TakanoY.
en-aut-sei=Takano
en-aut-mei=Y.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=IshiiS.
en-aut-sei=Ishii
en-aut-mei=S.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=IriyamaS.
en-aut-sei=Iriyama
en-aut-mei=S.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=KawaradaH.
en-aut-sei=Kawarada
en-aut-mei=H.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=YokoyaT.
en-aut-sei=Yokoya
en-aut-mei=T.
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Department of Physics, Tohoku University

affil-num=3
en-affil=
kn-affil=WPI Research Center, Advanced Institute for Materials Research, Tohoku University

affil-num=4
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=5
en-affil=
kn-affil=Department of Physics, Tohoku University

affil-num=6
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=8
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=9
en-affil=
kn-affil=National Institute for Materials Science

affil-num=10
en-affil=
kn-affil=National Institute for Materials Science

affil-num=11
en-affil=
kn-affil=School of Science and Engineering, Waseda University

affil-num=12
en-affil=
kn-affil=School of Science and Engineering, Waseda University

affil-num=13
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=470
cd-vols=
no-issue=S1
article-no=
start-page=S637
end-page=S638
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=201012
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Photoemission study of Ca-intercalated graphite superconductor CaC<sub>6</sub>
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=In this work, we have performed resonant photoemission studies of Ca-intercalated graphite superconductor CaC6. Using photon energy of the Ca 2p-3d threshold, the photoemission intensity of the peak at Fermi energy (E-F) is resonantly enhanced. This result provides spectroscopic evidence for the existence of Ca 3d states at E-F, and strongly supports that Ca 3d state plays a crucial role for the superconductivity of this material with relatively high T-c.
en-copyright=
kn-copyright=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=IwaiKeisuke
en-aut-sei=Iwai
en-aut-mei=Keisuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=NoamiKengo
en-aut-sei=Noami
en-aut-mei=Kengo
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=MuroTakayuki
en-aut-sei=Muro
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=NakamuraTetsuya
en-aut-sei=Nakamura
en-aut-mei=Tetsuya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=TomiokaFumiaki
en-aut-sei=Tomioka
en-aut-mei=Fumiaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=TakanoYoshihiko
en-aut-sei=Takano
en-aut-mei=Yoshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=TakenakaAsami
en-aut-sei=Takenaka
en-aut-mei=Asami
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=ToyodaMasahiro
en-aut-sei=Toyoda
en-aut-mei=Masahiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

en-aut-name=OguchTamio
en-aut-sei=Oguch
en-aut-mei=Tamio
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=14
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=15
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=6
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=7
en-affil=
kn-affil=Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency

affil-num=8
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=9
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=10
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=11
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=12
en-affil=
kn-affil=Faculty of Engineering, Oita University

affil-num=13
en-affil=
kn-affil=Faculty of Engineering, Oita University

affil-num=14
en-affil=
kn-affil=Department of Quantum Matter, Graduate School of Advanced Sciences of Matter (ADSM)

affil-num=15
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=79
cd-vols=
no-issue=12
article-no=
start-page=124701-1
end-page=124701-4
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20101125
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Electronic Structure of the Novel Filled Skutterudite PrPt<sub>4</sub>Ge<sub>12</sub> Superconductor
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt<sub>4</sub>Ge<sub>12</sub> in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt<sub>4</sub>Ge<sub>12</sub> measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt<sub>4</sub>Ge<sub>12</sub>, indicating similarity of Pt?Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (E<sub>F</sub>). Pr 3d �� 4f RPES shows that, although Pr 4f electrons in PrPt<sub>4</sub>Ge<sub>12</sub> are not as strongly hybridized with conduction electrons near E<sub>F</sub> as in PrFe4P12, there are finite Pr 4f contribution to the states near E<sub>F</sub> in PrPt<sub>4</sub>Ge<sub>12</sub>. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt<sub>4</sub>Ge<sub>12</sub>.
en-copyright=
kn-copyright=

en-aut-name=NakamuraYoshiaki
en-aut-sei=Nakamura
en-aut-mei=Yoshiaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=TakeyaHiroyuki
en-aut-sei=Takeya
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=HirataKazuto
en-aut-sei=Hirata
en-aut-mei=Kazuto
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=KumigashiraHiroshi
en-aut-sei=Kumigashira
en-aut-mei=Hiroshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=OshimaMasaharu
en-aut-sei=Oshima
en-aut-mei=Masaharu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=8
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=9
en-affil=
kn-affil=CREST, Japan Science and Technology Corporation (JST)

affil-num=10
en-affil=
kn-affil=CREST, Japan Science and Technology Corporation (JST)

affil-num=11
en-affil=
kn-affil=The Graduate School of Science and Technology, Okayama University
en-keyword=PrPt<sub>4</sub>Ge<sub>12</sub>
kn-keyword=PrPt<sub>4</sub>Ge<sub>12</sub>
en-keyword=filled skutterudite
kn-keyword=filled skutterudite
en-keyword=superconductor
kn-keyword=superconductor
en-keyword=soft x-ray photoemission spectroscopy
kn-keyword=soft x-ray photoemission spectroscopy
en-keyword=Pr 3d �� 4f resonant photoemission
kn-keyword=Pr 3d �� 4f resonant photoemission
en-keyword=electronic structure
kn-keyword=electronic structure
END

start-ver=1.4
cd-journal=joma
no-vol=86
cd-vols=
no-issue=1
article-no=
start-page=014521-1
end-page=014521-5
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2012
dt-pub=20120726
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Comparative photoemission studies on the superconducting gap of the filled skutterudite superconductors LaPt<sub>4</sub>Ge<sub>12</sub> and PrPt<sub>4</sub>Ge<sub>12</sub>
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We performed a comparative study of the superconducting gap in the new filled skutterudite superconductors LaPt<sub>4</sub>Ge<sub>12</sub> and PrPt<sub>4</sub>Ge<sub>12</sub> using high-resolution photoemission spectroscopy. We succeeded in observing spectral changes across Tc that reflect the opening of the superconducting gap in both compounds and also in observing a noticeable difference in their respective superconducting spectral shapes near the Fermi level, pointing toward a more complex superconducting gap structure in PrPt<sub>4</sub>Ge<sub>12</sub>. In addition, we found that the two-gap model is more suitable for describing the superconducting-state spectrum of PrPt<sub>4</sub>Ge<sub>12</sub> than the single-isotropic-gap and single-anisotropic-gap models, which suggests an explanation that multiband effects may possibly induce the anomalous superconducting properties of PrPt<sub>4</sub>Ge<sub>12</sub>.
en-copyright=
kn-copyright=

en-aut-name=NakamuraYoshiaki
en-aut-sei=Nakamura
en-aut-mei=Yoshiaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=TakeyaHiroyuki
en-aut-sei=Takeya
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=HirataKazuto
en-aut-sei=Hirata
en-aut-mei=Kazuto
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=6
en-affil=
kn-affil=National Institute for Materials Science (NIMS)

affil-num=7
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=8
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=9
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=72
cd-vols=
no-issue=5
article-no=
start-page=580
end-page=581
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2011
dt-pub=20110501
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Ultrahigh-resolution laser photoemission study of URu<sub>2</sub>Si<sub>2</sub> across the hidden-order transition
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We have studied the electronic structures of URu<sub>2</sub>Si<sub>2</sub> employing ultrahigh-resolutionlaser angle-resolved photoemission spectroscopy. The change of photoemission spectra is investigated across the hidden-ordertransition, and the emergence of a narrow band is clearly observed near the Fermi level for both (��,0) and (��,��) directions. In addition, it is shown that tuning of light's polarization allows the signal of a hole-like dispersive feature to enhance. These observations prove that laser angle-resolved photoemission spectroscopy is an effective tool for studying the evolution of electronic structures across the hidden-ordertransition in URu<sub>2</sub>Si<sub>2</sub>.
en-copyright=
kn-copyright=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=NakamuraYoshiaki
en-aut-sei=Nakamura
en-aut-mei=Yoshiaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=FukuiMasaki
en-aut-sei=Fukui
en-aut-mei=Masaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=HagaYoshinori
en-aut-sei=Haga
en-aut-mei=Yoshinori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=YamamotoEtsuji
en-aut-sei=Yamamoto
en-aut-mei=Etsuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=?nukiYoshichika
en-aut-sei=?nuki
en-aut-mei=Yoshichika
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=OkawaMario
en-aut-sei=Okawa
en-aut-mei=Mario
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=ShinShik
en-aut-sei=Shin
en-aut-mei=Shik
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=5
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=6
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=7
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=8
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=9
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=10
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=11
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
en-keyword=Electronic structure
kn-keyword=Electronic structure
en-keyword=Laser angle-resolved photoemission spectroscopy
kn-keyword=Laser angle-resolved photoemission spectroscopy
en-keyword=URu<sub>2</sub>Si<sub>2</sub>
kn-keyword=URu<sub>2</sub>Si<sub>2</sub>
en-keyword=Hidden order
kn-keyword=Hidden order
END

start-ver=1.4
cd-journal=joma
no-vol=470
cd-vols=
no-issue=S1
article-no=
start-page=S389
end-page=S390
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=201012
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Analysis on photoemission spectrum of superconducting FeSe
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=In this paper, we present the result of soft X-ray photoemission spectroscopy and its comparison with the density functional calculation. Although local density approximation seems to be a good starting point for describing the electronic structure of FeSe, the simulated spectrum poorly reproduced the structure around E(B) = 2 eV. This result suggests the necessity of theoretical treatment beyond local density approximation.
en-copyright=
kn-copyright=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=MizuguchiYoshikazu
en-aut-sei=Mizuguchi
en-aut-mei=Yoshikazu
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=TsudaShunsuke
en-aut-sei=Tsuda
en-aut-mei=Shunsuke
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=TakanoYoshihiko
en-aut-sei=Takano
en-aut-mei=Yoshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=TakeyaHiroyuki
en-aut-sei=Takeya
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=HirataKazuto
en-aut-sei=Hirata
en-aut-mei=Kazuto
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=KatoYukako
en-aut-sei=Kato
en-aut-mei=Yukako
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=MuroTakayuki
en-aut-sei=Muro
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=OkawaMario
en-aut-sei=Okawa
en-aut-mei=Mario
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=IshizakaKyoko
en-aut-sei=Ishizaka
en-aut-mei=Kyoko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=ShinShik
en-aut-sei=Shin
en-aut-mei=Shik
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

en-aut-name=HarimaHisatomo
en-aut-sei=Harima
en-aut-mei=Hisatomo
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=14
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=15
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=16
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=17
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Research Laboratory for Surface Science (RLSS), Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=JST, Transformative Research-Project on Iron Pnictides (TRIP)

affil-num=5
en-affil=
kn-affil=JST, Transformative Research-Project on Iron Pnictides (TRIP)

affil-num=6
en-affil=
kn-affil=JST, Transformative Research-Project on Iron Pnictides (TRIP)

affil-num=7
en-affil=
kn-affil=National Institute for Material Science

affil-num=8
en-affil=
kn-affil=National Institute for Material Science

affil-num=9
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=10
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=11
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=12
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=13
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=14
en-affil=
kn-affil=JST, Transformative Research-Project on Iron Pnictides (TRIP)

affil-num=15
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=16
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=17
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
en-keyword=Iron chalcogenide superconductor
kn-keyword=Iron chalcogenide superconductor
en-keyword=FeSe
kn-keyword=FeSe
en-keyword=Photoemission spectroscopy
kn-keyword=Photoemission spectroscopy
en-keyword=Band calculation
kn-keyword=Band calculation
END

start-ver=1.4
cd-journal=joma
no-vol=470
cd-vols=
no-issue=S1
article-no=
start-page=S641
end-page=S643
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=201012
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=The boron concentration dependence of the Si electronic structure of Si(100)2 �~ 1 surfaces were investigated
by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts
toward lower binding energy as the boron concentration increases. The band dispersion was obtained
from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level
even with a boron concentration 35 times larger than the critical concentration of the metal-insulator
transition.
en-copyright=
kn-copyright=

en-aut-name=WakitaTakanori
en-aut-sei=Wakita
en-aut-mei=Takanori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=TakanoYoshihiko
en-aut-sei=Takano
en-aut-mei=Yoshihiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

affil-num=1
en-affil=
kn-affil=Research Laboratory for Surface Science (RLSS), Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=National Institute for Material Science (NIMS)

affil-num=4
en-affil=
kn-affil=Research Laboratory for Surface Science (RLSS), Okayama University

affil-num=5
en-affil=
kn-affil=Research Laboratory for Surface Science (RLSS), Okayama University

affil-num=6
en-affil=
kn-affil=Research Laboratory for Surface Science (RLSS), Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=181
cd-vols=
no-issue=2-3
article-no=
start-page=249
end-page=251
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=201008
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Angle-resolved photoemission spectroscopy for VO<sub>2</sub> thin films grown on TiO<sub>2</sub> (0 0 1) substrates
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO<sub>2</sub> thin films. The VO<sub>2</sub> thin films have been grown on TiO<sub>2</sub> (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal?insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3?8 eV along the �C?Z direction. The periodicity of the dispersive band is found to be 2.2 ?<sup>-1</sup> which is almost identical with the periodicity expected from the c-axis length of the VO<sub>2</sub> thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO<sub>2</sub> thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO<sub>2</sub>.
en-copyright=
kn-copyright=

en-aut-name=MuraokaY
en-aut-sei=Muraoka
en-aut-mei=Y
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=SaekiK
en-aut-sei=Saeki
en-aut-mei=K
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=YaoY
en-aut-sei=Yao
en-aut-mei=Y
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=WakitaT
en-aut-sei=Wakita
en-aut-mei=T
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=HiraiM
en-aut-sei=Hirai
en-aut-mei=M
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=YokoyaT
en-aut-sei=Yokoya
en-aut-mei=T
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=EguchiR
en-aut-sei=Eguchi
en-aut-mei=R
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=ShinS
en-aut-sei=Shin
en-aut-mei=S
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

affil-num=1
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=Faculty of Science, Research Laboratory for Surface Science, Okayama University

affil-num=5
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=RIKEN/SPring-8

affil-num=8
en-affil=
kn-affil=RIKEN/SPring-8
en-keyword=ARPES
kn-keyword=ARPES
en-keyword=VO<sub>2</sub>
kn-keyword=VO<sub>2</sub>
en-keyword=Thin film
kn-keyword=Thin film
END

start-ver=1.4
cd-journal=joma
no-vol=18
cd-vols=
no-issue=6
article-no=
start-page=879
end-page=884
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2011
dt-pub=201111
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Development of a soft X-ray angle-resolved photoemission system applicable to 100 ?m crystals
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=A system for angle-resolved photoemission spectroscopy (ARPES) of small single crystals with sizes down to 100 ?m has been developed. Soft X-ray synchrotron radiation with a spot size of �`40 ?m �~ 65 ?m at the sample position is used for the excitation. Using this system an ARPES measurement has been performed on a Si crystal of size 120 ?m �~ 100 ?m �~ 80 ?m. The crystal was properly oriented on a sample stage by measuring the Laue spots. The crystal was cleaved in situ with a microcleaver at 100 K. The cleaved surface was adjusted to the beam spot using an optical microscope. Consequently, clear band dispersions along the &Gamma;-X direction reflecting the bulk electronic states were observed with a photon energy of 879 eV.
en-copyright=
kn-copyright=

en-aut-name=MuroTakayuki
en-aut-sei=Muro
en-aut-mei=Takayuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=Katoyukako
en-aut-sei=Kato
en-aut-mei=yukako
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=MatsushitaTomohiro
en-aut-sei=Matsushita
en-aut-mei=Tomohiro
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=KinoshitaToyohiko
en-aut-sei=Kinoshita
en-aut-mei=Toyohiko
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=WatanabeYoshio
en-aut-sei=Watanabe
en-aut-mei=Yoshio
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=OkazakiHiroyuki
en-aut-sei=Okazaki
en-aut-mei=Hiroyuki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=SekiyamaAkira
en-aut-sei=Sekiyama
en-aut-mei=Akira
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=Sugahigemasa
en-aut-sei=Suga
en-aut-mei=higemasa
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

affil-num=1
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)

affil-num=2
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)

affil-num=3
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)

affil-num=4
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)

affil-num=5
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)

affil-num=6
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=8
en-affil=
kn-affil=Graduate School of Engineering Science, Osaka University

affil-num=9
en-affil=
kn-affil=Graduate School of Engineering Science, Osaka University
en-keyword=angle-resolved photoemission spectroscopy (ARPES)
kn-keyword=angle-resolved photoemission spectroscopy (ARPES)
en-keyword=soft X-ray
kn-keyword=soft X-ray
en-keyword=small crystal
kn-keyword=small crystal
en-keyword=microcleaving
kn-keyword=microcleaving
en-keyword=micropositioning
kn-keyword=micropositioning
END

start-ver=1.4
cd-journal=joma
no-vol=82
cd-vols=
no-issue=20
article-no=
start-page=205108-1
end-page=205108-6
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20101108
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Signature of hidden order and evidence for periodicity modification in URu<sub>2</sub>Si<sub>2</sub>
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=The detail of electronic structures near the Fermi level in URu<sub>2</sub>Si<sub>2</sub> has been investigated employing state-of-art laser angle-resolved photoemission spectroscopy. The observation of a narrow dispersive band near the Fermi level in the ordered state as well as its absence in a Rh-substituted sample strongly suggest that the emergence of the narrow band is a clear signature of the hidden-order transition. The temperature dependence of the narrow band, which appears at the onset of the hidden-order transition, invokes the occurrence of periodicity modification in the ordered state, which is shown for the first time by any spectroscopic probe. We compare our data to other previous studies and discuss possible implications.
en-copyright=
kn-copyright=

en-aut-name=YoshidaRikiya
en-aut-sei=Yoshida
en-aut-mei=Rikiya
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=NakamuraYoshiaki
en-aut-sei=Nakamura
en-aut-mei=Yoshiaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=FukuiMasaki
en-aut-sei=Fukui
en-aut-mei=Masaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=HagaYoshinori
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en-aut-mei=Yoshinori
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=YamamotoEtsuji
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en-aut-mei=Etsuji
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kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=OnukiYoshichika
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en-aut-mei=Yoshichika
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kn-aut-sei=
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aut-affil-num=6
ORCID=

en-aut-name=OkawaMario
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kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=ShinShik
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en-aut-mei=Shik
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=8
ORCID=

en-aut-name=HiraiMasaaki
en-aut-sei=Hirai
en-aut-mei=Masaaki
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=MuraokaYuji
en-aut-sei=Muraoka
en-aut-mei=Yuji
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=YokoyaTakayoshi
en-aut-sei=Yokoya
en-aut-mei=Takayoshi
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=4
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=5
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=6
en-affil=
kn-affil=Advanced Science Research Center, Japan Atomic Energy Agency

affil-num=7
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=8
en-affil=
kn-affil=Institute for Solid State Physics, The University of Tokyo

affil-num=9
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=10
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=11
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=82
cd-vols=
no-issue=19
article-no=
start-page=195114-1
end-page=195114-5
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20101110
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Electronic structure of pristine and K-doped solid picene: Nonrigid band change and its implication for electron-intramolecular-vibration interaction
en-subtitle=
kn-subtitle=
en-abstract=
kn-abstract=We use photoemission spectroscopy to study electronic structures of pristine and K-doped solid picene. The valence band spectrum of pristine picene consists of three main features with no state at the Fermi level (E<sub>F</sub>) while that of K-doped picene has three structures similar to those of pristine picene with new states near E<sub>F</sub>, consistent with the semiconductor-metal transition. The K-induced change cannot be explained with a simple rigid-band model of pristine picene but can be interpreted by molecular-orbital calculations considering electron-intramolecular-vibration interaction. Excellent agreement of the K-doped spectrum with the calculations points to importance of electron-intramolecular-vibration interaction in K-doped picene.
en-copyright=
kn-copyright=

en-aut-name=OkazakiH
en-aut-sei=Okazaki
en-aut-mei=H
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=1
ORCID=

en-aut-name=WakitaT
en-aut-sei=Wakita
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kn-aut-name=
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kn-aut-mei=
aut-affil-num=2
ORCID=

en-aut-name=MuroT
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kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=3
ORCID=

en-aut-name=KajiY
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kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=4
ORCID=

en-aut-name=LeeX
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kn-aut-sei=
kn-aut-mei=
aut-affil-num=5
ORCID=

en-aut-name=MitamuraH
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kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=6
ORCID=

en-aut-name=KawasakiN
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kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=KubozonoY
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kn-aut-sei=
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aut-affil-num=8
ORCID=

en-aut-name=YamanariY
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kn-aut-sei=
kn-aut-mei=
aut-affil-num=9
ORCID=

en-aut-name=KambeT
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en-aut-mei=T
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=10
ORCID=

en-aut-name=KatoT
en-aut-sei=Kato
en-aut-mei=T
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=11
ORCID=

en-aut-name=HiraiM
en-aut-sei=Hirai
en-aut-mei=M
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=12
ORCID=

en-aut-name=MuraokaY
en-aut-sei=Muraoka
en-aut-mei=Y
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=13
ORCID=

en-aut-name=YokoyaT
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en-aut-mei=T
kn-aut-name=
kn-aut-sei=
kn-aut-mei=
aut-affil-num=14
ORCID=

affil-num=1
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8

affil-num=4
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=5
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=6
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=7
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=8
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=9
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=10
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=11
en-affil=
kn-affil=Institute for Innovative Science and Technology, Graduate School of Engineering, Nagasaki Institute of Applied Science

affil-num=12
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=13
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=14
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University
END

start-ver=1.4
cd-journal=joma
no-vol=81
cd-vols=
no-issue=18
article-no=
start-page=180509-1
end-page=180509-4
dt-received=
dt-revised=
dt-accepted=
dt-pub-year=2010
dt-pub=20100517
dt-online=
en-article=
kn-article=
en-subject=
kn-subject=
en-title=
kn-title=Angle-resolved photoemission observation of the superconducting-gap minimum and its relation to the nesting vector in the phonon-mediated superconductor YNi<sub>2</sub>B<sub>2</sub>C
en-subtitle=
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en-abstract=
kn-abstract=We have performed ultrahigh-resolution angle-resolved photoemission spectroscopy to directly study the large superconducting (SC) gap anisotropy of YNi<sub>2</sub>B<sub>2</sub>C. We succeed in measuring momentum (k) dependence of SC gap for individual Fermi surface (FS) sheets, which demonstrates complexity of SC gap in a phonon-mediated superconductor. Within measured k regions on FS sheets, we find a pointlike minimum of SC gap, whose k positions can be connected by the known nesting vector. This shows close correlation between the nesting vector and node formation.
en-copyright=
kn-copyright=

en-aut-name=BabaT
en-aut-sei=Baba
en-aut-mei=T
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aut-affil-num=1
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en-aut-name=YokoyaT
en-aut-sei=Yokoya
en-aut-mei=T
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kn-aut-mei=
aut-affil-num=2
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en-aut-name=TsudaS
en-aut-sei=Tsuda
en-aut-mei=S
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aut-affil-num=3
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en-aut-name=WatanabeT
en-aut-sei=Watanabe
en-aut-mei=T
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aut-affil-num=4
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en-aut-name=NoharaM
en-aut-sei=Nohara
en-aut-mei=M
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kn-aut-mei=
aut-affil-num=5
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en-aut-name=TakagiH
en-aut-sei=Takagi
en-aut-mei=H
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kn-aut-mei=
aut-affil-num=6
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en-aut-name=OguchiT
en-aut-sei=Oguchi
en-aut-mei=T
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kn-aut-mei=
aut-affil-num=7
ORCID=

en-aut-name=ShinS
en-aut-sei=Shin
en-aut-mei=S
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kn-aut-mei=
aut-affil-num=8
ORCID=

affil-num=1
en-affil=
kn-affil=Institute for Solid State Physics, University of Tokyo

affil-num=2
en-affil=
kn-affil=The Graduate School of Natural Science and Technology, Okayama University

affil-num=3
en-affil=
kn-affil=Institute for Solid State Physics, University of Tokyo

affil-num=4
en-affil=
kn-affil=Institute for Solid State Physics, University of Tokyo

affil-num=5
en-affil=
kn-affil=Department of Advanced Materials Science, University of Tokyo

affil-num=6
en-affil=
kn-affil=Department of Advanced Materials Science, University of Tokyo

affil-num=7
en-affil=
kn-affil=Department of Quantum Matter, Graduate school of Advanced Sciences of Matter (ADSM), Hiroshima University

affil-num=8
en-affil=
kn-affil=Institute for Solid State Physics, University of Tokyo
END