start-ver=1.4 cd-journal=joma no-vol=698 cd-vols= no-issue= article-no= start-page=137854 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2020 dt-pub=202003 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Strain effects on spinodal decomposition in TiO2-VO(2)films on TiO2(100) substrates en-subtitle= kn-subtitle= en-abstract= kn-abstract= We investigate the influence of lattice strain in the c-axis direction on spinodal decomposition in rutile TiO2-VO2 films on TiO2(100) substrates. The [100]-oriented Ti0.4V0.6O2 (TVO) solid-solution films are fabricated on rutile TiO2(100) substrates using a pulsed laser deposition with a KrF excimer laser, and are annealed inside the spinodal region. X-ray diffraction and scanning transmission electron microscopy are employed for characterization. Consequently, the in-plane tensile strain in the c-axis direction promotes the Ti-V interdiffusion in TVO/TiO2(100) under thermal annealing. In contrast, relaxation of the tensile strain results in the occurrence of spinodal decomposition along the c-axis direction in the film. These results indicate that the relaxation of the tensile strain in the c-axis direction is critically important for enabling spinodal decomposition in TVO/TiO2(100). Our work helps deepen the understanding of spinodal decomposition in the TVO film and provides information on achieving novel nanostructures via spinodal decomposition in TVO/TiO2(100). en-copyright= kn-copyright= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=YoshiiFumiya en-aut-sei=Yoshii en-aut-mei=Fumiya kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=FukudaTakahiro en-aut-sei=Fukuda en-aut-mei=Takahiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=ManabeYuji en-aut-sei=Manabe en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=YasunoMikiko en-aut-sei=Yasuno en-aut-mei=Mikiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=TakemotoYoshito en-aut-sei=Takemoto en-aut-mei=Yoshito kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=2 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=7 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=8 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=9 en-affil= kn-affil= en-keyword=Strain effect kn-keyword=Strain effect en-keyword=Spinodal decomposition kn-keyword=Spinodal decomposition en-keyword=Titanium dioxide kn-keyword=Titanium dioxide en-keyword=Vanadium dioxide kn-keyword=Vanadium dioxide en-keyword=Thin films kn-keyword=Thin films en-keyword=Interdiffusion kn-keyword=Interdiffusion en-keyword=Nanostructure kn-keyword=Nanostructure en-keyword=Pulsed laser deposition kn-keyword=Pulsed laser deposition END start-ver=1.4 cd-journal=joma no-vol=90 cd-vols= no-issue=22 article-no= start-page= end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2014 dt-pub=20141222 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2 en-subtitle= kn-subtitle= en-abstract= kn-abstract=The electronic structure of nearly optimally doped novel superconductor LaO1?xFxBiS2(x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change. en-copyright= kn-copyright= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SonoyamaJunki en-aut-sei=Sonoyama en-aut-mei=Junki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=SunagawaMasanori en-aut-sei=Sunagawa en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=OnoKanta en-aut-sei=Ono en-aut-mei=Kanta kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KumigashiraHiroshi en-aut-sei=Kumigashira en-aut-mei=Hiroshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=MuroTakayuki en-aut-sei=Muro en-aut-mei=Takayuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=NagaoMasanori en-aut-sei=Nagao en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=WatauchiSatoshi en-aut-sei=Watauchi en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=TanakaIsao en-aut-sei=Tanaka en-aut-mei=Isao kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=OkazakiHiroyuki en-aut-sei=Okazaki en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=TakanoYoshihiko en-aut-sei=Takano en-aut-mei=Yoshihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MiuraOsuke en-aut-sei=Miura en-aut-mei=Osuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=UsuiHidetomo en-aut-sei=Usui en-aut-mei=Hidetomo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=SuzukiKatsuhiro en-aut-sei=Suzuki en-aut-mei=Katsuhiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=KurokiKazuhiko en-aut-sei=Kuroki en-aut-mei=Kazuhiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= affil-num=1 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=2 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=3 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=4 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=5 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=6 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=7 en-affil= kn-affil=Japan Synchrtron Radiation Research Institute (JASRI)/SPring-8 affil-num=8 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=9 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=10 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=11 en-affil= kn-affil=National Institute for Materials Science affil-num=12 en-affil= kn-affil=National Institute for Materials Science affil-num=13 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=14 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=15 en-affil= kn-affil=Department of Physics, Osaka University affil-num=16 en-affil= kn-affil=Department of Physics, Osaka University affil-num=17 en-affil= kn-affil=Department of Physics, Osaka University affil-num=18 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=19 en-affil= kn-affil=1Graduate School of Natural Science and Technology and Research Laboratory for Surface Science END start-ver=1.4 cd-journal=joma no-vol=9 cd-vols= no-issue= article-no= start-page=5376 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2019 dt-pub=2019329 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Fermi level tuning of Ag-doped Bi2Se3 topological insulator en-subtitle= kn-subtitle= en-abstract= kn-abstract=The temperature dependence of the resistivity (rho) of Ag-doped Bi2Se3 (AgxBi2-xSe3) shows insulating behavior above 35 K, but below 35 K, rho suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi2Se3 at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi2Se3 can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgxBi2-xSe3 and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgxBi2-xSe3 provides metallic behavior that is similar to that of non-doped Bi2Se3, indicating a successful upward tuning of the Fermi level. en-copyright= kn-copyright= en-aut-name=UesugiEri en-aut-sei=Uesugi en-aut-mei=Eri kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=UchiyamaTakaki en-aut-sei=Uchiyama en-aut-mei=Takaki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=GotoHidenori en-aut-sei=Goto en-aut-mei=Hidenori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=OtaHiromi en-aut-sei=Ota en-aut-mei=Hiromi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=UenoTeppei en-aut-sei=Ueno en-aut-mei=Teppei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=FujiwaraHirokazu en-aut-sei=Fujiwara en-aut-mei=Hirokazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=MatsuiFumihiko en-aut-sei=Matsui en-aut-mei=Fumihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=AkimitsuJun en-aut-sei=Akimitsu en-aut-mei=Jun kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=KobayashiKaya en-aut-sei=Kobayashi en-aut-mei=Kaya kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=KubozonoYoshihiro en-aut-sei=Kubozono en-aut-mei=Yoshihiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=2 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=3 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=4 en-affil= Advanced Science Research Centre, Okayama University kn-affil= affil-num=5 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=6 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=7 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=8 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=9 en-affil=Graduate School of Materials Science, Nara Institute of Science and Technology kn-affil= affil-num=10 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=11 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=12 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=96 cd-vols= no-issue=4 article-no= start-page=041106 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2017 dt-pub=201707 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Evolution of the remnant Fermi-surface state in the lightly doped correlated spin-orbit insulator Sr2-xLaxIrO4 en-subtitle= kn-subtitle= en-abstract= kn-abstract= The electronic structure of the lightly electron-doped correlated spin-orbit insulator Sr2IrO4 has been studied by angle-resolved photoelectron spectroscopy. We have observed the coexistence of a lower Hubbard band and an in-gap band; the momentum dependence of the latter traces that of the band calculations without on-site Coulomb repulsion. The in-gap state remained anisotropically gapped in all observed momentum areas, forming a remnant Fermi-surface state, evolving towards the Fermi energy by carrier doping. These experimental results show a striking similarity with those observed in deeply underdoped cuprates, suggesting the common nature of the nodal liquid states observed in both compounds. en-copyright= kn-copyright= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SunagawaM. en-aut-sei=Sunagawa en-aut-mei=M. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=FujiwaraH. en-aut-sei=Fujiwara en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FukuraT. en-aut-sei=Fukura en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=FujiiM. en-aut-sei=Fujii en-aut-mei=M. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=OkadaK. en-aut-sei=Okada en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=HoriganeK. en-aut-sei=Horigane en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KobayashiK. en-aut-sei=Kobayashi en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=HorieR. en-aut-sei=Horie en-aut-mei=R. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=AkimitsuJ. en-aut-sei=Akimitsu en-aut-mei=J. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=GoliasE. en-aut-sei=Golias en-aut-mei=E. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=MarchenkoD. en-aut-sei=Marchenko en-aut-mei=D. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=VarykhalovA. en-aut-sei=Varykhalov en-aut-mei=A. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=SainiN. L. en-aut-sei=Saini en-aut-mei=N. L. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=WakitaT. en-aut-sei=Wakita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=MuraokaY. en-aut-sei=Muraoka en-aut-mei=Y. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=YokoyaT. en-aut-sei=Yokoya en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=2 en-affil=Graduate School of Natural Sciences, Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Natural Sciences, Okayama University kn-affil= affil-num=4 en-affil= kn-affil= affil-num=5 en-affil=Graduate School of Natural Sciences, Okayama University kn-affil= affil-num=6 en-affil=Aoyama Gakuin University kn-affil= affil-num=7 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=8 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=9 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=10 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=11 en-affil=Helmholtz-Zentrum Berlin f?r Materialien und Energie kn-affil= affil-num=12 en-affil=Helmholtz-Zentrum Berlin f?r Materialien und Energie kn-affil= affil-num=13 en-affil=Helmholtz-Zentrum Berlin f?r Materialien und Energie kn-affil= affil-num=14 en-affil=Dipartimento di Fisica, Universit? di Roma gLa Sapienza kn-affil= affil-num=15 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=16 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= affil-num=17 en-affil=Research Institute for Interdisciplinary Science, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=19 cd-vols= no-issue=9 article-no= start-page=5915 end-page=5919 dt-received= dt-revised= dt-accepted= dt-pub-year=2019 dt-pub=20190802 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography en-subtitle= kn-subtitle= en-abstract= kn-abstract= Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond. en-copyright= kn-copyright= en-aut-name=YokoyaT. en-aut-sei=Yokoya en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TerashimaK. en-aut-sei=Terashima en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=TakedaA. en-aut-sei=Takeda en-aut-mei=A. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FukuraT. en-aut-sei=Fukura en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=FujiwaraH. en-aut-sei=Fujiwara en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=MuroT. en-aut-sei=Muro en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=KinoshitaT. en-aut-sei=Kinoshita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KatoH. en-aut-sei=Kato en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=YamasakiS. en-aut-sei=Yamasaki en-aut-mei=S. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=OguchiT. en-aut-sei=Oguchi en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WakitaT. en-aut-sei=Wakita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=MuraokaY. en-aut-sei=Muraoka en-aut-mei=Y. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MatsushitaT. en-aut-sei=Matsushita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=2 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=7 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=8 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=9 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=10 en-affil=Institute of Scientific and Industrial Research, Osaka University kn-affil= affil-num=11 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=12 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=13 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= en-keyword=Dopant local structure kn-keyword=Dopant local structure en-keyword=asymmetric dopant incorporation kn-keyword=asymmetric dopant incorporation en-keyword=diamond kn-keyword=diamond en-keyword=dopant-vacancy complex kn-keyword=dopant-vacancy complex en-keyword=photoelectron holography kn-keyword=photoelectron holography en-keyword=substitutional doping kn-keyword=substitutional doping END