このエントリーをはてなブックマークに追加
ID 60104
著者
Okamoto, Hideki Graduate School of Natural Science and Technology, Okayama University ORCID Kaken ID researchmap
Hamao, Shino Research Institute for Interdisciplinary Science, Okayama University
Kozasa, Keiko Graduate School of Natural Science and Technology, Okayama University
Wang, Yanan Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro Research Institute for Interdisciplinary Science, Okayama University ORCID Kaken ID publons researchmap
Pan, Yong-He Department of Physics & Center for Quantum Technology, National Tsing Hua University
Yen, Yu-Hsiang Department of Physics & Center for Quantum Technology, National Tsing Hua University
Hoffmann, Germar Department of Physics & Center for Quantum Technology, National Tsing Hua University
Tani, Fumito Institute for Materials Chemistry and Engineering, Kyushu University
Goto, Kenta Institute for Materials Chemistry and Engineering, Kyushu University
抄録
Field-effect transistors (FETs) were fabricated using a new type of phenacene molecule, 3,12-ditetradecyl[7]phenacene ((C14H29)2-[7]phenacene), and solid gate dielectrics or an electric double layer (EDL) capacitor with an ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate (bmim[PF6])). The new molecule, (C14H29)2-[7]phenacene, was efficiently synthesized via the Mallory photoreaction. Its crystal structure and electronic properties were determined, using X-ray diffraction, scanning tunneling microscopy/spectroscopy (STM and STS), absorption spectroscopy, and photoelectron yield spectroscopy, which showed a monoclinic crystal lattice (space group P21 (no. 4)) and an energy gap of ∼3.0 eV. The STM image clearly showed the molecular structure of (C14H29)2-[7]phenacene, as well as the closed molecular stacking, indicative of a strong fastener effect between alkyl chains. The X-ray diffraction pattern of thin films of (C14H29)2-[7]phenacene formed on a SiO2/Si substrate suggested that the molecule stood on the surface with an inclined angle of 30° with respect to the normal axis of the surface. The FET properties were recorded in two-terminal measurement mode, showing p-channel normally-off characteristics. The averaged values of field-effect mobility, μ, were 1.6(3) cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film FET with a SiO2 gate dielectric and 6(4) × 10−1 cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film EDL FET with bmim[PF6]. Thus, higher FET performance was obtained with an FET using a thin film of (C14H29)2-[7]phenacene compared to parent [7]phenacene. This study could pioneer an avenue for the realization of high-performance FETs through the addition of alkyl chains to phenacene molecules.
備考
This fulltext is available in Apr. 2021.
発行日
2020-04-18
出版物タイトル
Journal of Materials Chemistry C
8巻
22号
出版者
Royal Society of Chemistry
開始ページ
7422
終了ページ
7435
ISSN
2050-7526
NCID
AA12605026
資料タイプ
学術雑誌論文
言語
English
OAI-PMH Set
岡山大学
著作権者
© The Royal Society of Chemistry 2020
論文のバージョン
author
DOI
Web of Science KeyUT
関連URL
isVersionOf https://doi.org/10.1039/D0TC00272K
助成機関名
文部科学省
助成番号
26105004
17K05976
17K05500
18K04940
18K18736
19H02676