Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.