ID | 51906 |
フルテキストURL | |
著者 |
Uesugi, Eri
Okayama Univ, Surface Sci Res Lab
Fujiwara, Akihiko
SPring 8, Japan Synchrotron Radiat Res Inst
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抄録 | Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance C-g. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance C-EDL between the ionic liquid and graphene involves the series connection of C-g and the quantum capacitance C-q, which is proportional to the density of states. We investigated the variables that determine C-EDL at the molecular level by varying the number of graphene layers n and thereby optimising C-q. The C-EDL value is governed by C-q at n, 4, and by C-g at n > 4. This transition with n indicates a composite nature for C-EDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor.
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発行日 | 2013-04-13
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出版物タイトル |
Scientific Reports
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巻 | 3巻
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ISSN | 2045-2322
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資料タイプ |
学術雑誌論文
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オフィシャル URL | http://dx.doi.org/10.1038/srep01595
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言語 |
英語
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論文のバージョン | publisher
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査読 |
有り
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DOI | |
Web of Science KeyUT |