start-ver=1.4 cd-journal=joma no-vol=19 cd-vols= no-issue=9 article-no= start-page=5915 end-page=5919 dt-received= dt-revised= dt-accepted= dt-pub-year=2019 dt-pub=20190802 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography en-subtitle= kn-subtitle= en-abstract= kn-abstract= Diamond has two crystallographically inequivalent sites in the unit cell. In doped diamond, dopant occupation in the two sites is expected to be equal. Nevertheless, preferential dopant occupation during growth under nonequilibrium conditions is of fundamental importance, for example, to enhance the properties of nitrogen-vacancy (N-V) centers; therefore, this is a promising candidate for a qubit. However, the lack of suitable experimental techniques has made it difficult to study the crystal- and chemical-site-resolved local structures of dopants. Here, we confirm the identity of two chemical sites with asymmetric dopant incorporation in the diamond structure, via the photoelectron holography (PEH) of heavily phosphorus (P)-doped diamond prepared by chemical vapor deposition. One is substitutionally incorporated P with preferential site occupations and the other can be attributed to a PV split vacancy complex with preferential orientation. The present study shows that PEH is a valuable technique to study the local structures around dopants with a resolution of crystallographically inequivalent but energetically equivalent sites/orientations. Such information provides strategies to improve the properties of dopant related-complexes in which alignment is crucial for sensing of magnetic field or quantum spin register using N-V centers in diamond. en-copyright= kn-copyright= en-aut-name=YokoyaT. en-aut-sei=Yokoya en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TerashimaK. en-aut-sei=Terashima en-aut-mei=K. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=TakedaA. en-aut-sei=Takeda en-aut-mei=A. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FukuraT. en-aut-sei=Fukura en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=FujiwaraH. en-aut-sei=Fujiwara en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=MuroT. en-aut-sei=Muro en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=KinoshitaT. en-aut-sei=Kinoshita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KatoH. en-aut-sei=Kato en-aut-mei=H. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=YamasakiS. en-aut-sei=Yamasaki en-aut-mei=S. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=OguchiT. en-aut-sei=Oguchi en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WakitaT. en-aut-sei=Wakita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=MuraokaY. en-aut-sei=Muraoka en-aut-mei=Y. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MatsushitaT. en-aut-sei=Matsushita en-aut-mei=T. kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= affil-num=1 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=2 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=3 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Graduate School of Science and Technology, Okayama University kn-affil= affil-num=6 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=7 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= affil-num=8 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=9 en-affil=Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) kn-affil= affil-num=10 en-affil=Institute of Scientific and Industrial Research, Osaka University kn-affil= affil-num=11 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=12 en-affil=Research Institute for Interdisciplinary Science (RIIS), Okayama University kn-affil= affil-num=13 en-affil=Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8 kn-affil= en-keyword=Dopant local structure kn-keyword=Dopant local structure en-keyword=asymmetric dopant incorporation kn-keyword=asymmetric dopant incorporation en-keyword=diamond kn-keyword=diamond en-keyword=dopant-vacancy complex kn-keyword=dopant-vacancy complex en-keyword=photoelectron holography kn-keyword=photoelectron holography en-keyword=substitutional doping kn-keyword=substitutional doping END start-ver=1.4 cd-journal=joma no-vol=95 cd-vols= no-issue=8 article-no= start-page=085109 end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2017 dt-pub=201702 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Ce 4f electronic states of CeO1-xFxBiS2 studied by soft x-ray photoemission spectroscopy en-subtitle= kn-subtitle= en-abstract= kn-abstract= We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x = 0.7 has no f(0) component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (E-F) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2. en-copyright= kn-copyright= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=HamadaTakahiro en-aut-sei=Hamada en-aut-mei=Takahiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=FujiwaraHirokazu en-aut-sei=Fujiwara en-aut-mei=Hirokazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=MinoharaMakoto en-aut-sei=Minohara en-aut-mei=Makoto kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KobayashiMasaki en-aut-sei=Kobayashi en-aut-mei=Masaki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=HoribaKoji en-aut-sei=Horiba en-aut-mei=Koji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=KumigashiraHiroshi en-aut-sei=Kumigashira en-aut-mei=Hiroshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=KutlukGalif en-aut-sei=Kutluk en-aut-mei=Galif kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=NagaoMasanori en-aut-sei=Nagao en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=WatauchiSatoshi en-aut-sei=Watauchi en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=TanakaIsao en-aut-sei=Tanaka en-aut-mei=Isao kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=DemuraSatoshi en-aut-sei=Demura en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=OkazakiHiroyuki en-aut-sei=Okazaki en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=TakanoYoshihiko en-aut-sei=Takano en-aut-mei=Yoshihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=MiuraOsuke en-aut-sei=Miura en-aut-mei=Osuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=OkadaKozo en-aut-sei=Okada en-aut-mei=Kozo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=20 ORCID= affil-num=1 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=2 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=3 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=4 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=5 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=6 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=7 en-affil= kn-affil= affil-num=8 en-affil=Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) kn-affil= affil-num=9 en-affil=Synchrotron Radiation Center, Hiroshima University kn-affil= affil-num=10 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=11 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=12 en-affil=Center for Crystal Science and Technology, University of Yamanashi kn-affil= affil-num=13 en-affil=National Institute for Materials Science kn-affil= affil-num=14 en-affil=National Institute for Materials Science kn-affil= affil-num=15 en-affil=National Institute for Materials Science kn-affil= affil-num=16 en-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University kn-affil= affil-num=17 en-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University kn-affil= affil-num=18 en-affil=Department of Physics and the Graduate school of Natural Science and Technology, Okayama University kn-affil= affil-num=19 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= affil-num=20 en-affil=Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University kn-affil= END start-ver=1.4 cd-journal=joma no-vol=90 cd-vols= no-issue=22 article-no= start-page= end-page= dt-received= dt-revised= dt-accepted= dt-pub-year=2014 dt-pub=20141222 dt-online= en-article= kn-article= en-subject= kn-subject= en-title= kn-title=Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2 en-subtitle= kn-subtitle= en-abstract= kn-abstract=The electronic structure of nearly optimally doped novel superconductor LaO1−xFxBiS2(x = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the (Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change. en-copyright= kn-copyright= en-aut-name=TerashimaKensei en-aut-sei=Terashima en-aut-mei=Kensei kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=1 ORCID= en-aut-name=SonoyamaJunki en-aut-sei=Sonoyama en-aut-mei=Junki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=2 ORCID= en-aut-name=WakitaTakanori en-aut-sei=Wakita en-aut-mei=Takanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=3 ORCID= en-aut-name=SunagawaMasanori en-aut-sei=Sunagawa en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=4 ORCID= en-aut-name=OnoKanta en-aut-sei=Ono en-aut-mei=Kanta kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=5 ORCID= en-aut-name=KumigashiraHiroshi en-aut-sei=Kumigashira en-aut-mei=Hiroshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=6 ORCID= en-aut-name=MuroTakayuki en-aut-sei=Muro en-aut-mei=Takayuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=7 ORCID= en-aut-name=NagaoMasanori en-aut-sei=Nagao en-aut-mei=Masanori kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=8 ORCID= en-aut-name=WatauchiSatoshi en-aut-sei=Watauchi en-aut-mei=Satoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=9 ORCID= en-aut-name=TanakaIsao en-aut-sei=Tanaka en-aut-mei=Isao kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=10 ORCID= en-aut-name=OkazakiHiroyuki en-aut-sei=Okazaki en-aut-mei=Hiroyuki kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=11 ORCID= en-aut-name=TakanoYoshihiko en-aut-sei=Takano en-aut-mei=Yoshihiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=12 ORCID= en-aut-name=MiuraOsuke en-aut-sei=Miura en-aut-mei=Osuke kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=13 ORCID= en-aut-name=MizuguchiYoshikazu en-aut-sei=Mizuguchi en-aut-mei=Yoshikazu kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=14 ORCID= en-aut-name=UsuiHidetomo en-aut-sei=Usui en-aut-mei=Hidetomo kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=15 ORCID= en-aut-name=SuzukiKatsuhiro en-aut-sei=Suzuki en-aut-mei=Katsuhiro kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=16 ORCID= en-aut-name=KurokiKazuhiko en-aut-sei=Kuroki en-aut-mei=Kazuhiko kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=17 ORCID= en-aut-name=MuraokaYuji en-aut-sei=Muraoka en-aut-mei=Yuji kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=18 ORCID= en-aut-name=YokoyaTakayoshi en-aut-sei=Yokoya en-aut-mei=Takayoshi kn-aut-name= kn-aut-sei= kn-aut-mei= aut-affil-num=19 ORCID= affil-num=1 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=2 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=3 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=4 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=5 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=6 en-affil= kn-affil=High Energy Accelerator Research Organization (KEK), Photon Factory affil-num=7 en-affil= kn-affil=Japan Synchrtron Radiation Research Institute (JASRI)/SPring-8 affil-num=8 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=9 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=10 en-affil= kn-affil=Center for Crystal Science and Technology, University of Yamanashi affil-num=11 en-affil= kn-affil=National Institute for Materials Science affil-num=12 en-affil= kn-affil=National Institute for Materials Science affil-num=13 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=14 en-affil= kn-affil=Department of Electrical and Electronic Engineering, Tokyo Metropolitan University affil-num=15 en-affil= kn-affil=Department of Physics, Osaka University affil-num=16 en-affil= kn-affil=Department of Physics, Osaka University affil-num=17 en-affil= kn-affil=Department of Physics, Osaka University affil-num=18 en-affil= kn-affil=Graduate School of Natural Science and Technology and Research Laboratory for Surface Science, Okayama University affil-num=19 en-affil= kn-affil=1Graduate School of Natural Science and Technology and Research Laboratory for Surface Science END