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ID 11614
Eprint ID
11614
フルテキストURL
タイトル(別表記)
Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
著者
藤原 貴 (堤)松下電器産業株式会社
藤井 達生 岡山大学 Kaken ID
難波 徳郎 岡山大学
高田 潤 岡山大学
三浦 嘉也 岡山大学
抄録
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
キーワード
ZnO film
Al doped ZnO
transparent conductive film
r.f. activated reactive evaporation method
発行日
1997-01-10
出版物タイトル
岡山大学環境理工学部研究報告
出版物タイトル(別表記)
Journal of the Faculty of Environmental Science and Technology, Okayama University
2巻
1号
出版者
岡山大学環境理工学部
出版者(別表記)
Faculty of Environmental Science and Technology, Okayama University
開始ページ
121
終了ページ
129
ISSN
1341-9099
NCID
AN10529213
資料タイプ
紀要論文
関連URL
http://www.okayama-u.ac.jp/user/est/homeJapan.html
言語
Japanese
論文のバージョン
publisher
査読
無し
Eprints Journal Name
fest