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ID 11614
JaLCDOI
Sort Key
12
タイトル(別表記)
Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
フルテキストURL
著者
藤原 貴 (堤)松下電器産業株式会社
藤井 達生 岡山大学 Kaken ID
三浦 嘉也 岡山大学
抄録
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
キーワード
ZnO film
Al doped ZnO
transparent conductive film
r.f. activated reactive evaporation method
出版物タイトル
岡山大学環境理工学部研究報告
発行日
1997-01-10
2巻
1号
出版者
岡山大学環境理工学部
出版者(別表記)
Faculty of Environmental Science and Technology, Okayama University
開始ページ
121
終了ページ
129
ISSN
1341-9099
NCID
AN10529213
資料タイプ
紀要論文
OAI-PMH Set
岡山大学
言語
Japanese
論文のバージョン
publisher
NAID
Eprints Journal Name
fest