JaLCDOI 10.18926/15482
フルテキストURL Mem_Fac_Eng_OU_24_1_93.pdf
著者 東辻 浩夫| 畑谷 光輝|
抄録 Propagation of charged carriers in semiconductor superlattices is analyzed on the basis of the effective mass approximation with appropriate boundary conditions at heterojunctions taken into account. Applying the finite element method, clarified are the effects of details of the potential profile, such as linear and smooth gradings and random fluctuations, on characteristics of superlattices which are expected to work as collector barriers and energy filters in electronic devices.
出版物タイトル Memoirs of the Faculty of Engineering, Okayama University
発行日 1989-11-29
24巻
1号
開始ページ 93
終了ページ 105
ISSN 0475-0071
言語 English
論文のバージョン publisher
NAID 120002307513