Amorphous films of lead oxyfluorosilicate were prepared with a rf-sputtering technique, and the distribution profiles of the component elements and chemical states of the fluoride ions were analyzed with an X-ray photoelectron spectrometer. Si atoms with an expanded coordination, O(4)Si-F, were present near the surface, and O(3)Si-F units were present in the deeper part of the films. Electrical resistance indicated transition to a conduction state for the films containing fluoride ions, while the films were crystallized to precipitate low quartz by the irradiation of He-Ne laser of 3 mW up to 1 sec.