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ID 60104
Author
Okamoto, Hideki Graduate School of Natural Science and Technology, Okayama University ORCID Kaken ID researchmap
Hamao, Shino Research Institute for Interdisciplinary Science, Okayama University
Kozasa, Keiko Graduate School of Natural Science and Technology, Okayama University
Wang, Yanan Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro Research Institute for Interdisciplinary Science, Okayama University ORCID Kaken ID publons researchmap
Pan, Yong-He Department of Physics & Center for Quantum Technology, National Tsing Hua University
Yen, Yu-Hsiang Department of Physics & Center for Quantum Technology, National Tsing Hua University
Hoffmann, Germar Department of Physics & Center for Quantum Technology, National Tsing Hua University
Tani, Fumito Institute for Materials Chemistry and Engineering, Kyushu University
Goto, Kenta Institute for Materials Chemistry and Engineering, Kyushu University
Abstract
Field-effect transistors (FETs) were fabricated using a new type of phenacene molecule, 3,12-ditetradecyl[7]phenacene ((C14H29)2-[7]phenacene), and solid gate dielectrics or an electric double layer (EDL) capacitor with an ionic liquid (1-butyl-3-methylimidazolium hexafluorophosphate (bmim[PF6])). The new molecule, (C14H29)2-[7]phenacene, was efficiently synthesized via the Mallory photoreaction. Its crystal structure and electronic properties were determined, using X-ray diffraction, scanning tunneling microscopy/spectroscopy (STM and STS), absorption spectroscopy, and photoelectron yield spectroscopy, which showed a monoclinic crystal lattice (space group P21 (no. 4)) and an energy gap of ∼3.0 eV. The STM image clearly showed the molecular structure of (C14H29)2-[7]phenacene, as well as the closed molecular stacking, indicative of a strong fastener effect between alkyl chains. The X-ray diffraction pattern of thin films of (C14H29)2-[7]phenacene formed on a SiO2/Si substrate suggested that the molecule stood on the surface with an inclined angle of 30° with respect to the normal axis of the surface. The FET properties were recorded in two-terminal measurement mode, showing p-channel normally-off characteristics. The averaged values of field-effect mobility, μ, were 1.6(3) cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film FET with a SiO2 gate dielectric and 6(4) × 10−1 cm2 V−1 s−1 for a (C14H29)2-[7]phenacene thin-film EDL FET with bmim[PF6]. Thus, higher FET performance was obtained with an FET using a thin film of (C14H29)2-[7]phenacene compared to parent [7]phenacene. This study could pioneer an avenue for the realization of high-performance FETs through the addition of alkyl chains to phenacene molecules.
Note
This fulltext is available in Apr. 2021.
Published Date
2020-04-18
Publication Title
Journal of Materials Chemistry C
Volume
volume8
Issue
issue22
Publisher
Royal Society of Chemistry
Start Page
7422
End Page
7435
ISSN
2050-7526
NCID
AA12605026
Content Type
Journal Article
language
英語
OAI-PMH Set
岡山大学
Copyright Holders
© The Royal Society of Chemistry 2020
File Version
author
DOI
Web of Science KeyUT
Related Url
isVersionOf https://doi.org/10.1039/D0TC00272K
Funder Name
Ministry of Education, Culture, Sports, Science and Technology
助成番号
26105004
17K05976
17K05500
18K04940
18K18736
19H02676