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ID 15436
JaLCDOI
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Author
Fujii, Tatsuo Kaken ID
Sakata Naoki
Miura, Yoshinari
Abstract
(001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
Publication Title
Memoirs of the Faculty of Engineering, Okayama University
Published Date
1992-03-28
Volume
volume26
Issue
issue2
Publisher
Faculty of Engineering, Okayama University
Publisher Alternative
岡山大学工学部
Start Page
69
End Page
75
ISSN
0475-0071
NCID
AA10699856
Content Type
Departmental Bulletin Paper
OAI-PMH Set
岡山大学
language
英語
File Version
publisher
NAID
Eprints Journal Name
mfe