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ID 15486
JaLCDOI
Sort Key
3
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Author
Miura, Yoshinari
Kawamura, Toshio
Abstract
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph (SEM). XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and inlet position of oxygen gas effect the c-axis orientation, the growth rate and the microstructure of the films. Optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows: the substrate temperature;400℃, the evaporation rate;5.0(A)/s, the oxygen pressure;2.0x10(-4) Torr, the r.f. power;150 to 200W, and the oxygen gas inlet near the substrate. For the film prepared under the optimum conditions, the standard deviation σ of the rocking curve for the (002) diffraction was 1.9deg, smaller than that of the film prepared by using an r.f. sputtering method.
Publication Title
Memoirs of the Faculty of Engineering, Okayama University
Published Date
1990-12-14
Volume
volume25
Issue
issue1
Publisher
Faculty of Engineering, Okayama University
Publisher Alternative
岡山大学工学部
Start Page
23
End Page
35
ISSN
0475-0071
NCID
AA10699856
Content Type
Departmental Bulletin Paper
OAI-PMH Set
岡山大学
language
英語
File Version
publisher
NAID
Eprints Journal Name
mfe