ID | 48744 |
FullText URL | |
Author |
Wakita, Takanori
Okazaki, Hiroyuki
Takano, Yoshihiko
Hirai, Masaaki
Muraoka, Yuji
Kaken ID
researchmap
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Abstract | The boron concentration dependence of the Si electronic structure of Si(100)2 × 1 surfaces were investigated
by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts
toward lower binding energy as the boron concentration increases. The band dispersion was obtained
from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level
even with a boron concentration 35 times larger than the critical concentration of the metal-insulator
transition.
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Published Date | 2010-12
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Publication Title |
Physica C-Superconductivity and its Applications
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Volume | volume470
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Issue | issueS1
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Publisher | Elsevier
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Start Page | S641
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End Page | S643
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ISSN | 0921-4534
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NCID | AA11461984
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Content Type |
Journal Article
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Project |
Research Center of New Functional Materials for Energy Production, Storage, and Transport
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Official Url | http://www.sciencedirect.com/science/article/pii/S0921453409007448#
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language |
English
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Copyright Holders | Copyright © 2009 Elsevier B.V. All rights reserved.
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File Version | author
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Refereed |
True
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DOI | |
Web of Science KeyUT |