ID | 32961 |
FullText URL | |
Author |
Okada, Yasuyuki
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Abstract | The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with various ratios. The resultant aluminum nitride added silicon carbide ceramics were doped with nitrogen by changing the post-HIP nitrogen gas pressure. The lattice parameter increased with the amount of adding aluminum nitride indicating that the incorporated aluminum substituted smaller silicon atoms. After post-HIP treatment, lattice parameter then decreased with nitrogen gas pressure. The piezoresistive coefficient increased with the addition of aluminum nitride, it further increased with the nitrogen doping pressure.
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Keywords | HIP
co-doping
donor
acceptor
silicon carbide
strain sensor
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Note | Published with permission from the copyright holder.
This is a author's copy,as published in Ceramics International , 2008 Vol.34 Issue.4 pp.845-848 Publisher URL: http://dx.doi.org/10.1016/j.ceramint.2007.09.033 Direct access to Thomson Web of Science record Copyright © 2007 Elsevier Ltd and Techna Group S.r.l. |
Published Date | 2008-05
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Publication Title |
Ceramics International
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Volume | volume34
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Issue | issue4
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Publisher | Elsevier Science Ltd
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Start Page | 845
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End Page | 848
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ISSN | 0272-8842
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NCID | AA10622625
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Content Type |
Journal Article
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language |
English
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Copyright Holders | Elsevier Ltd and Techna Group S.r.l.
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File Version | author
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Refereed |
True
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DOI | |
Web of Science KeyUT | |
Submission Path | materials_science/1
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