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ID 48848
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Author
Okazaki, H.
Arakane, T.
Sugawara, K.
Sato, T.
Takahashi, T.
Wakita, T.
Hirai, M.
Takano, Y.
Ishii, S.
Iriyama, S.
Kawarada, H.
Abstract
We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E(F)) up to similar to 5k(B)T can be observed (k(B) is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E(F). Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E(F), can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.
Published Date
2011-05-01
Publication Title
Journal of Physics and Chemistry of Solids
Volume
volume72
Issue
issue5
Start Page
582
End Page
584
ISSN
0022-3697
Content Type
Journal Article
Project
Research Center of New Functional Materials for Energy Production, Storage, and Transport
Official Url
http://www.sciencedirect.com/science/article/pii/S0022369710003562
language
英語
Copyright Holders
Copyright © 2010 Elsevier Ltd. All rights reserved.
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Refereed
True
DOI
Web of Sience KeyUT