We have studied the electronic structures of URu2Si2 employing ultrahigh-resolutionlaser angle-resolved photoemission spectroscopy. The change of photoemission spectra is investigated across the hidden-ordertransition, and the emergence of a narrow band is clearly observed near the Fermi level for both (π,0) and (π,π) directions. In addition, it is shown that tuning of light's polarization allows the signal of a hole-like dispersive feature to enhance. These observations prove that laser angle-resolved photoemission spectroscopy is an effective tool for studying the evolution of electronic structures across the hidden-ordertransition in URu2Si2.
Laser angle-resolved photoemission spectroscopy
Journal of Physics and Chemistry of Solids
Research Center of New Functional Materials for Energy Production, Storage, and Transport
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